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SLUS694B – MARCH 2006 – REVISED AUGUST 2006
ELECTRICAL CHARACTERISTICS (continued)
over junction temperature range (0°C
≤
T
J
≤
125°C) and the recommended supply voltage range (unless otherwise noted)
PARAMETER
V
(SET)
Battery charge current set
voltage
(5)
Charge current set factor, BAT
TEST CONDITIONS
Voltage on ISET1, V
VCC
≥
4.35 V,
V
I(OUT)
- V
I(BAT)
> V
(DO-MAX)
,
V
I(BAT)
> V
(LOWV)
100 mA
≤
I
O(BAT)
≤
1.5 A
10 mA
≤
I
O(BAT)
≤
100 mA
(6)
ISET2 = Low
ISET2 = High
80
400
MIN
2.47
375
300
TYP
2.50
425
450
MAX
2.53
450
600
UNIT
V
K
(SET)
USB MODE INPUT CURRENT LIMIT
I
(USB)
USB input port current range
90
100
500
mA
BAT PIN CHARGING VOLTAGE REGULATION, V
O (BAT-REG)
+ V
(DO-MAX)
< V
CC
, I
TERM
< I
BAT(OUT)
≤
1 A
Battery charge voltage
V
O(BAT-REG)
Battery charge voltage regulation
accuracy
T
A
= 25°C
–0.5%
–1%
4.2
0.5%
1%
V
CHARGE TERMINATION DETECTION
I
(TERM)
V
(TERM)
Charge termination detection
range
Charge termination set voltage,
measured on ISET1
Deglitch time for termination
detection
V
I(BAT)
> V
(RCH)
,
I
(TERM)
= (K
(SET)
× V
(TERM)
)/ R
SET
V
I(BAT)
> V
(RCH)
, Mode = High
V
I(BAT)
> V
(RCH)
, Mode = Low
t
FALL
= 100 ns, 10 mV overdrive,
I
CHG
increasing above or decreasing
below threshold
10
230
95
250
100
22.5
150
270
130
mA
mV
T
DGL(TERM)
ms
TEMPERATURE SENSE COMPARATORS
V
LTF
V
HTF
I
TS
T
DGL(TF)
High voltage threshold
Low voltage threshold
Temperature sense current
source
Deglitch time for temperature
fault detection
(7)
R
(TMR)
= 50 kΩ, V
I(BAT)
increasing or
decreasing above and below;
100-ns fall time, 10-mv overdrive
Temp fault at V(TS) > V
LTF
Temp fault at V(TS) < V
HTF
2.465
0.485
94
2.500
0.500
100
2.535
0.515
106
V
V
µA
22.5
ms
BATTERY RECHARGE THRESHOLD
V
RCH
T
DGL(RCH)
Recharge threshold voltage
Deglitch time for recharge
detection
(7)
R
(TMR)
= 50 kΩ, V
I(BAT)
increasing
or decreasing below threshold,
100-ns fall time, 10-mv overdrive
V
O(BAT-REG)
–0.075
V
O(BAT-REG)
–0.100
22.5
V
O(BAT-REG)
–0.125
V
ms
STAT1, STAT2, AND PG, OPEN DRAIN (OD) OUTPUTS
(8)
V
OL
I
LKG
ISET2, CE INPUTS
V
IL
V
IH
I
IL
I
IH
I
IL
I
IH
t
(CE-HLDOFF)
MODE INPUT
V
IL
V
IH
Low-level input voltage
High-level input voltage
Falling Hi→Low; 280 K ± 10% applied
when low.
Input R
Mode
sets external hysteresis
0.975
V
IL
+ .01
1
1.025
V
IL
+ .024
V
V
Low-level input voltage
High-level input voltage
Low-level input current, CE
High-level input current, CE
Low-level input current, ISET2
High-level input current, ISET2
Holdoff time, CE
V
ISET2
= 0.4 V
V
ISET2
= V
CC
CE going low only
4
–20
40
6
ms
0
1.4
–1
1
µA
0.4
V
Low-level output saturation
voltage
Input leakage current
I
OL
= 5 mA, An external pullup
resistor
≥
1 K required.
1
0.25
5
V
µA
(5)
(6)
(7)
(8)
For half-charge rate, V
(SET)
is 1.25 V ± 25 mV.
Specification is for monitoring charge current via the ISET1 pin during voltage regulation mode, not for a reduced fast-charge level.
All deglitch periods are a function of the timer setting and is modified in DPPM or thermal regulation modes by the percentages that the
program current is reduced.
See Charger Sleep mode for PG (V
CC
= V
IN
) specifications.
5
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