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BQ20Z80DBTR 参数 Datasheet PDF下载

BQ20Z80DBTR图片预览
型号: BQ20Z80DBTR
PDF下载: 下载PDF文件 查看货源
内容描述: SBS 1.1标准的电量监测计启用Impedance Track技术为使用的bq29312A [SBS 1.1-COMPLIANT GAS GAUGE ENABLED WITH IMPEDANCE TRACK TECHNOLOGY FOR USE WITH THE bq29312A]
分类和应用: 光电二极管
文件页数/大小: 73 页 / 1137 K
品牌: TI [ TEXAS INSTRUMENTS ]
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bq20z80-V101  
www.ti.com  
SLUS625DSEPTEMBER 2004REVISED OCTOBER 2005  
PLL SWITCHING CHARACTERISTICS  
VDD = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
0.5% frequency error  
MIN  
TYP  
MAX  
UNIT  
(1)  
t(SP)  
Start-up time  
2
5
ms  
(1) The frequency error is measured from the trimmed frequency of the internal system clock which is 128 oscillator frequency, nominally  
4.194 MHz.  
OSCILLATOR  
VDD = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
ROSC = 100 kΩ  
MIN  
–2%  
TYP  
0.25%  
0.25%  
MAX UNIT  
2%  
1%  
f(exo)  
Frequency error from 32.768 kHz  
ROSC = 100 k, VDD = 3.3 V  
XCK1 = 12-pF XTAL  
ROSC = 100 kΩ  
–1%  
–0.25%  
0.25%  
(1)  
f(sxo)  
Start-up time  
250  
200  
µs  
XCK1 = 12-pF XTAL  
ms  
(1) The start-up time is defined as the time it takes for the oscillator output frequency to be within 1% of the specified frequency.  
DATA FLASH MEMORY CHARACTERISTICS  
VDD = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)  
PARAMETER  
Data retention  
TEST CONDITIONS  
MIN  
(1)10  
TYP  
MAX  
UNIT  
Years  
Cycles  
ms  
tDR  
(1)  
(1)  
(1)  
Flash programming write-cycles  
Word programming time  
20,000  
t(WORDPROG)  
I(DDPROG)  
2
Flash-write supply current  
8
15  
mA  
(1) Assured by design. Not production tested  
REGISTER BACKUP  
VDD = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
V(RBI) > 3 V, VDD < VIT  
MIN  
TYP  
10  
MAX UNIT  
I(RBI)  
RBI data-retention input current  
RBI data-retention voltage(1)  
100  
nA  
V
V(RBI)  
1.3  
(1) Specified by design. Not production tested.  
5
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