ADS7810
SBAS014A –MARCH 1992–REVISED SEPTEMBER 2010
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ELECTRICAL CHARACTERISTICS (continued)
At TA = –40°C to +70°C, fS = 800kHz, +VDIG = +VANA = +5V, –VANA = –5V, using internal reference and the 50Ω input resistor
shown in Figure 16, unless otherwise specified.
ADS7810U
TYP
ADS7819UB(1)
TYP
PARAMETER
TEST CONDITIONS
UNIT
MIN
MAX
MIN
MAX
DIGITAL OUTPUTS
Data format
Data coding
Parallel 12 bits
Parallel 12 bits
Binary twos complement
Binary twos complement
VOL
VOH
ISINK = 1.6mA
+0.4
+0.4
V
V
ISOURCE = 500mA
+2.8
+2.8
Leakage current
High-Z state, VOUT = 0V to VDIG
High-Z state
±5
15
±5
15
mA
pF
Output capacitance
DIGITAL TIMING
Bus access time
62
83
62
83
ns
ns
Bus relinquish time
POWER SUPPLIES
+VDIG
+VANA
=
+4.75
–5.25
+5
+5.25
–4.75
+4.75
–5.25
+5
+5.25
–4.75
V
–VANA
+IDIG
–5
+16
+16
–13
–5
+16
+16
–13
V
Specified
performance
mA
mA
mA
+IANA
–IANA
+VDIG
+VANA
=
+4.5
–5.5
+5
+5.5
+4.5
–5.5
+5
+5.5
V
Derated
performance
–VANA
–5
–4.5
275
–5
–4.5
275
V
Power dissipation
fS = 800kHz
225
225
mW
TEMPERATURE RANGE
Specified performance
Derated performance
Storage
–40
–55
–65
+70
+125
+150
–40
–55
–65
+70
+125
+150
°C
°C
°C
Plastic DIP
SOIC
75
75
75
75
°C/W
°C/W
Thermal resistance
(qJA
)
4
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