ADC0801, ADC0802
ADC0803, ADC0804, ADC0805
SNOSBI1B –NOVEMBER 2009–REVISED FEBRUARY 2013
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
TYPICAL APPLICATIONS
8080 Interface
ERROR SPECIFICATION (Includes Full-Scale, Zero Error, and Non-Linearity)
VREF/2 = 2.500 VDC
(No Adjustments)
VREF/2 = No Connection
(No Adjustments)
FULL-SCALE
ADJUSTED
PART NUMBER
ADC0801
ADC0802
ADC0803
ADC0804
ADC0805
±1⁄4 LSB
±1⁄2 LSB
±1⁄2 LSB
±1 LSB
±1 LSB
ABSOLUTE MAXIMUM RATINGS
If Military/Aerospace specified devices are required, contact the National Semiconductor Sales Office/Distributors for
availability and specifications.
VALUE
UNIT
V
(1)
Supply voltage (VCC
)
6.5
Logic control inputs
–0.3 to +18
V
Voltage
At other input and outputs
–0.3 to (VCC +0.3)
V
Dual-In-Line Package (plastic
Dual-In-Line Package (ceramic)
Surface Mount Package Vapor Phase (60 seconds)
Infrared (15 seconds)
260
300
°C
°C
°C
°C
°C
mW
V
Lead Temperature
(Soldering, 10 seconds)
215
220
Storage Temperature Range
–65 to +150
875
Package Dissipation at TA = 25°C
ESD Susceptibility(2)
800
(1) A zener diode exists, internally, from VCC to GND and has a typical breakdown voltage of 7 VDC
.
(2) Human body model, 100 pF discharged through a 1.5 kΩ resistor.
2
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