78M6618 Data Sheet
DS_6618_005
2.5 Timing Specifications
2.5.1 Flash Memory
Table 20: Flash Memory Timing Specifications
Parameter
Condition
-40°C to +85°C
25°C
Min
20,000
100
Typ
Max
Unit
Flash write cycles
Flash data retention
Flash data retention
Cycles
Years
Years
Cycles
85°C
10
Flash byte write operations between
page or mass erase operations
2
Write Time per Byte
Page Erase (1024 bytes)
Mass Erase
42
20
µs
ms
ms
200
2.5.2 EEPROM Interface
Table 21: EEPROM Interface Timing
Parameter
Condition
Min
Typ
Max
Unit
Write Clock frequency (I2C)
CKMPU = 4.9152 MHz,
Using interrupts
78
kHz
CKMPU = 4.9152 MHz,
bit-banging DIO4/5
150
500
kHz
kHz
Write Clock frequency (3-wire)
CKMPU = 4.9152 MHz
2.5.3 RESET
Table 22: RESET Timing
Condition
Parameter
Min
Typ
Max
Unit
µs
Reset pulse width
Reset pulse fall time
5
11
µs
1 Guaranteed by design; not production tested.
2.5.4 RTC
Table 23: RTC Range
Condition
Parameter
Min
Typ
Max
Unit
Range for date
2000
2255
year
22
Rev. 1.4
TERIDIAN [ TERIDIAN SEMICONDUCTOR CORPORATION ]
