DS_8024RN_020
73S8024RN Data Sheet
12.4 Smart Card Interface Requirements
Symbol
Parameter
Condition
Min
Typ
Max
Unit
Card Power Supply (VCC) Regulator
General conditions, -40°C < T < 85°C, 4.75v < VPC < 5.5v, 2.7v < VDD < 5.5v
NDS conditions, 4.85v < VPC < 5.5v
Inactive mode
Inactive mode
ICC = 1mA
-0.1
-0.1
4.60
4.75
0.1
0.4
V
V
V
V
Active mode; ICC <65mA; 5v
Active mode; ICC <65mA; 5v,
NDS condition
5.25
5.25
Active mode; ICC <90mA; 5v
Active mode; ICC <90mA; 3v
4.55
2.80
5.25
3.2
V
V
Active mode; single pulse of
100mA for 2μs; 5 volt, fixed load
= 25mA
Active mode; single pulse of
100mA for 2μs; 3v, fixed load =
25mA
Active mode; current pulses of
40nAs with peak |ICC | <200mA,
t <400ns; 5v
4.6
2.76
4.6
5.25
3.2
V
V
V
Card supply voltage
including ripple and
noise
VCC
5.25
Active mode; current pulses of
40nAs with peak |ICC | <200mA,
t <400ns; 5v,
4.65
2.76
5.25
V
NDS condition
Active mode; current pulses of
40nAs with peak |ICC | <200mA,
t <400ns; 3v
3.2
V
VCCrip
ICCmax
VCC Ripple
fRIPPLE = 20K – 200MHz
Static load current, VCC>4.6
Static load current, VCC>4.55 or
2.7 volts as selected
350
mV
mA
65
90
Card supply output
current
mA
ICCF
ICC fault current
VCC slew rate -
90
150
mA
V/μs
VSR - VSF
0.02
0.050
0.160
0.08
CF = 3.3μF on VCC
CF = 1.0μF on VCC
NDS applications
CF should be ceramic with low
ESR (<100mΩ).
VSRN
VSFN
-
V/μs
VCC slew rate
0.06
1
0.26
5
External filter capacitor
(VCC to GND)
CF
3.3
1.0
μF
NDS applications
CF should be ceramic with low ESR
(<100mΩ).
External filter capacitor
(VCC to GND)
CFNDS
0.5
1.5
μF
Rev. 1.8
17
TERIDIAN [ TERIDIAN SEMICONDUCTOR CORPORATION ]
