DS_8014RN_014
73S8014RN Data Sheet
2.4
Smart Card Interface Requirements
Table 5: DC Smart Card Interface Requirements
Symbol
Parameter
Condition
Min
Nom
Max
Unit
Card Power Supply (V
CC
) Regulator
General conditions, -40
°
C < T < 85
°
C, 4.75V < V
PC
< 5.5V, 2.7V < V
DD
< 5.5V
NDS conditions, 4.85V < V
PC
< 5.5V
Inactive mode
Inactive mode, I
CC
= 1mA
Active mode; I
CC
<65mA; 5V
Active mode; I
CC
<65mA; 5V, NDS
condition
Active mode; I
CC
<65mA; 3V
Card supply voltage
including ripple and
noise
Active mode; single pulse of 100mA for
2μs; 5V, fixed load = 25mA
Active mode; single pulse of 100mA for
2μs; 3V, fixed load = 25mA
Active mode; current pulses of 40nAs
with peak |I
CC
| <200mA,
t <400ns; 5V
Active mode; current pulses of 40nAs
with peak |I
CC
| <200mA,
t <400ns;
5V, NDS condition
Active mode; current pulses of 40nAs
with peak |I
CC
| <200mA,
t <400ns; 3V
V
CCrip
I
CCmax
I
CCF
V
SR
V
SF
C
FNDS
V
CC
Ripple
Card supply output
current
I
CC
fault current
V
CC
slew rate, rise
V
CC
slew rate, fall
External filter cap
(V
CC
to GND)
C
F
= 1.0μF on V
CC
C
F
= 1.0μF on V
CC
NDS applications,
C
F
should be ceramic
with low ESR (<100mΩ).
-0.1
-0.1
4.65
4.75
2.85
4.6
2.76
4.6
0.1
0.4
5.25
5.25
3.15
5.25
3.2
5.25
V
V
V
V
V
V
V
V
V
CC
4.65
5.25
V
2.76
3.15
350
V
mV
mA
mA
f
RIPPLE
= 20K – 200MHz
Static load current, V
CC
>4.6 or 2.7 volts
as selected
Static load current, V
CC
>1.62
(1)
65
40
70
0.06
0.075
0.5
0.150
0.150
1.0
130
0.30
0.60
1.5
mA
V/μs
V/μs
μF
Rev. 1.0
9
TERIDIAN [ TERIDIAN SEMICONDUCTOR CORPORATION ]
