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5962-9073102M2X 参数 Datasheet PDF下载

5962-9073102M2X图片预览
型号: 5962-9073102M2X
PDF下载: 下载PDF文件 查看货源
内容描述: [SPST, 4 Func, 1 Channel, CMOS, CQCC20,]
分类和应用:
文件页数/大小: 16 页 / 160 K
品牌: TEMIC [ TEMIC SEMICONDUCTORS ]
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TABLE II. Electrical test requirements.  
Subgroups  
Subgroups  
(in accordance with  
(in accordance with  
Test requirements  
MIL-STD-883,  
MIL-PRF-38535, table III)  
method 5005, table I)  
Device  
Device  
class Q  
Device  
class V  
class M  
Interim electrical  
1
1
1
parameters (see 4.2)  
Final electrical  
1/ 1, 2, 3, 7, 8, 9,  
10, 11  
1/ 1, 2, 3, 7,  
8, 9, 10, 11  
1/ 1, 2, 3, 7,  
8, 9, 10, 11  
parameters (see 4.2)  
Group A test  
1, 2, 3, 7, 8, 9,  
10, 11  
1, 2, 3, 7, 8,  
9, 10, 11  
1, 2, 3, 7, 8, 9, 10, 11  
requirements (see 4.4)  
Group C end-point electrical  
parameters (see 4.4)  
Group D end-point electrical  
parameters (see 4.4)  
Group E end-point electrical  
parameters (see 4.4)  
1
1
1
1
1
1
1, 2, 3  
1
1
1/ PDA applies to subgroup 1.  
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table II herein.  
4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883:  
a. Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level  
control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the  
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of  
MIL-STD-883.  
b. TA = +125°C, minimum.  
c. Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.  
4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature,  
or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The  
test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with  
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the  
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MIL-STD-  
883.  
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table II herein.  
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured  
(see 3.5 herein).  
a. End-point electrical parameters shall be as specified in table II herein.  
b. For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as  
specified in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to  
radiation hardness assured tests as specified in MIL-PRF-38535, appendix A for the RHA level being tested. All device  
classes must meet the postirradiation end-point electrical parameter limits as defined in table I at TA = +25°C ±5°C,  
after exposure, to the subgroups specified in table II herein.  
SIZE  
STANDARD  
5962-90731  
A
MICROCIRCUIT DRAWING  
DEFENSE SUPPLY CENTER COLUMBUS  
COLUMBUS, OHIO 43218-3990  
REVISION LEVEL  
E
SHEET  
13  
DSCC FORM 2234  
APR 97  
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