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5962-9073102M2X 参数 Datasheet PDF下载

5962-9073102M2X图片预览
型号: 5962-9073102M2X
PDF下载: 下载PDF文件 查看货源
内容描述: [SPST, 4 Func, 1 Channel, CMOS, CQCC20,]
分类和应用:
文件页数/大小: 16 页 / 160 K
品牌: TEMIC [ TEMIC SEMICONDUCTORS ]
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4. VERIFICATION  
4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with  
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan  
shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in  
accordance with MIL-PRF-38535, appendix A.  
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted  
on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in  
accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.  
4.2.1 Additional criteria for device class M.  
a. Burn-in test, method 1015 of MIL-STD-883.  
(1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision  
level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall  
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in  
method 1015.  
(2) TA = +125°C, minimum.  
b. Interim and final electrical test parameters shall be as specified in table II herein.  
4.2.2 Additional criteria for device classes Q and V.  
a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the  
device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under  
document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with  
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall  
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in  
method 1015 of MIL-STD-883.  
b. Interim and final electrical test parameters shall be as specified in table II herein.  
c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in  
MIL-PRF-38535, appendix B.  
4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in  
accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups  
A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).  
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with  
MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein. Quality conformance inspection for  
device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed  
for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections  
(see 4.4.1 through 4.4.4).  
4.4.1 Group A inspection.  
a. Tests shall be as specified in table II herein.  
b. For device class M, subgroups 7 and 8 tests shall be sufficient to verify the truth table. For device classes Q and V,  
subgroups 7 and 8 shall include verifying the functionality of the device.  
SIZE  
STANDARD  
5962-90731  
A
MICROCIRCUIT DRAWING  
DEFENSE SUPPLY CENTER COLUMBUS  
COLUMBUS, OHIO 43218-3990  
REVISION LEVEL  
E
SHEET  
12  
DSCC FORM 2234  
APR 97