TABLE I. Electrical performance characteristics - Continued.
Test
Conditions
+125 C
5.5 V
unless otherwise specified
Symbol
Group A
subgroups
Device
types
Limits
Max
Unit
-55 C
T
C
Min
0
V
= 0 V; 4.5 V
V
CC
SS
Retention time 3/
t
t
See figure 4, as applicable
M,D,P
9, 10, 11
9 1/
All
ns
ns
CDR
R
2/
01,05,
13,22,
30
120
Operation recovery time
3/
9, 10, 11
02,06,
14,23,
31
100
85
03,07,
15,24,
32
04,08,
16,25,
33,42,
43
70
09,17,
26,34
55
45
35
10,18,
27,35
11,19,
28,36
47
30
25
12,20,
29,37
21,
38- 40
20
41,44
45,46
All
15
12
2/
M,D,P
9 1/
1/ When performing postirradiation electrical measurements for any RHA level TA = +25 C. Limits shown are guaranteed at
TA = +25 C 5 C. The M, D, and P in the test condition column are the postirradiation limits for the device types specified in
the device types column.
2/ Preirradiation values for RHA marked devices shall also be the postirradiation values unless otherwise specified.
3/ This parameter is tested initially and after any design or process change which could affect this parameter, and therefore
shall be guaranteed to the limits specified in table I.
4/ Functional tests shall include the test table and other test patterns used for fault detection as approved by the qualifying
activity. Outputs are measured at V
< 1.5 V, V > 1.5 V.
OL
OH
5/ For timing waveforms see figure 4 and for output load circuits, see figure 5.
6/ AC measurements assume transition time 5 ns, input levels are from ground to 3.0 V, and output load C
except as noted on figure 5. Timing reference levels are 1.5 V.
30 pF
L
7/ Transition is measured 500 mV from steady state voltage.
SIZE
STANDARD
MICROCIRCUIT DRAWING
5962-89598
A
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
L
SHEET
19
DSCC FORM 2234
APR 97
TEMIC [ TEMIC SEMICONDUCTORS ]
