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DH543-53 参数 Datasheet PDF下载

DH543-53图片预览
型号: DH543-53
PDF下载: 下载PDF文件 查看货源
内容描述: [Step Recovery Diode, Silicon, PLASTIC PACKAGE-3]
分类和应用: 倍频器梳状发生器脉冲发生器光电二极管
文件页数/大小: 56 页 / 641 K
品牌: TEMEX [ TEMEX ]
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SILICON PIN DIODES  
Non m agnetic square ceram ic package 500 volts PIN diodes  
Applications  
Maxim um ratings  
TEMEX non m agnetic SQP diodes are  
particularly suitable for Magnetic Resonance  
Im aging applications. The m axim um operating  
breakdown voltage is 550 V. Several values of  
total capacitance are available (beginning at  
0.40 pF), together with a low forward series  
resistance.  
OPERATING  
J UNCTION  
SOLDERING  
STORAGE  
- 55° C  
- 65° C  
230° C 5 sec.  
+ 150° C  
+ 150° C  
These devices are characterized for high power  
handling, low loss and low distortion (long  
carrier lifetim e design). The electrical properties  
are ideal for use in RF coils which m ust produce  
a hom ogeneous electrom agnetic field in the  
MRI system for frequencies from a few MHz to  
over 100 MHz.  
Electrical characteristics  
STANDARD RATINGS - MAXIMUM LIMITS OF ELECTRICAL PARAMETERS  
PACKAGED DIODES  
Minority  
Characteristics Applicable Breakdow n  
Total  
Forward series  
resistance  
Power  
dissipation  
carrier  
lifeτtiIm e  
at 25° C  
voltage  
voltage  
capacitance  
V
VBR  
CT  
RSF  
Test  
f = 1 MHz  
VR = 50 V  
f = 120 MHz  
IF as below  
IF = 10 m A  
IR = 6 m A  
Contact  
IR < 10 µA I < 10 µA  
r
conditions  
surface (1)  
TYPE  
V
V
pF  
m ax  
µs  
W
max  
typ.  
typ.  
max  
IF=100mA IF=200mA  
min.  
max  
DH80050-40  
DH80051-40  
DH80052-40  
DH80053-40  
DH80054-40  
DH80055-40  
500  
500  
500  
500  
500  
500  
550  
550  
550  
550  
550  
550  
0.40  
0.55  
0.85  
1.05  
1.25  
1.45  
0.45  
0.65  
1.05  
1.20  
1.35  
1.55  
0.70  
0.60  
0.40  
0.35  
0.30  
0.25  
0.65  
0.55  
0.35  
0.30  
0.27  
0.22  
1.1  
1.5  
2.0  
2.5  
3.0  
3.5  
3.0  
3.5  
4.0  
4.0  
4.5  
4.5  
(1) diode brazed on infinite copper heat sink  
12-16  
Vol. 1  
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