SILICON PIN DIODES
Square ceram ic surface m ountable PIN diodes
Medium voltage PIN diodes
Applicable Breakdow n Total capacitance
Forward series
resistance Rsf
(Ω)
Minority
carrier
τl (µs)
Max. power
dissipation
25° C
voltage V
(V)
Vbr
(V)
Ct
(pF)
Test
conditions
Type
DH80082
DH80100
DH80102
DH80106
Vr = 50 V
f = 1MHz
I=100mA I=200 mA If=10mA Contact Free
f=120MHz f=120 MHz Ir=6mA surface air
W (1) W (2)
I < 10 µA
Ir = 10 µA
m ax.
800
1000
1000
1000
typ.
850
1100
1100
1100
typ.
m ax.
1.00
0.65
1.00
2.00
m ax.
m in.
3.00
3.00
4.00
7.00
0.90
0.55
0.85
1.25
0.40
0.70
0.50
0.35
0.35
0.60
0.35
0.30
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
(1) Diode brazed on infinite copper heat sink
(2) Diode brazed on Epoxy circuit (PCB)
Tem perature ranges
Operating junction (T )
j
Storage
:
:
-55° C to +150° C
-65° C to +150° C
Series Resistance vs. Forward Current
RSF (Ω)
100
10
1
DH80052
DH80050
0
I (mA)
1000
0.1
10
100
RSF (Ω)
100
10
DH80053
DH80051
1
0
I (mA)
1000
0.1
10
100
12-14
Vol. 1
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TEMEX [ TEMEX ]
