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8T24SH 参数 Datasheet PDF下载

8T24SH图片预览
型号: 8T24SH
PDF下载: 下载PDF文件 查看货源
内容描述: 晶闸管产品目录 [Thyristor Product Catalog]
分类和应用: 栅极三端双向交流开关局域网
文件页数/大小: 224 页 / 2673 K
品牌: TECCOR [ TECCOR ELECTRONICS ]
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Typical Ratio of ----------------------------------------------------------------------- at 25 °C  
(Quadrant 1)  
                                                                                                                                         
Application Notes  
AN1002  
Holding current modes of the thyristor are strictly related to the  
voltage polarity across the main terminals. The following table  
illustrates how the positive and negative holding current modes  
of triacs relate to each other.  
Gate  
Drive  
to Thyristor  
Gate Pulse  
Time  
Typical Triac Holding Current Ratio  
Operating Mode  
Principal  
Current  
Through  
Thyristor  
Type  
IH(+)  
1
IH(-)  
1.1  
1.3  
Latching  
Current  
Point  
Holding Current Point  
Zero Crossing Point  
4 A Triac  
10 A Triac  
1
Time  
Example of a 10 A triac:  
If IH(+) = 10 mA, then  
IH(-) = 13 mA  
Figure AN1002.6  
Latching and Holding Characteristics of Thyristor  
Similar to gating, latching current requirements for triacs are dif-  
ferent for each operating mode (quadrant). Definitions of latching  
modes (quadrants) are the same as gating modes. Therefore,  
definitions shown in Figure AN1002.2 and Figure AN1002.3 can  
be used to describe latching modes (quadrants) as well. The fol-  
lowing table shows how different latching modes (quadrants)  
relate to each other. As previously stated, Quadrant II has the  
lowest latching current sensitivity of all four operating quadrants.  
Holding current is also temperature-dependent like gating and  
latching shown in Figure AN1002.7. The initial on-state current is  
200 mA to ensure that the thyristor is fully latched on prior to  
holding current measurement. Again, applications with low tem-  
perature requirements should have sufficient principal (anode)  
current available to maintain the thyristor in the on-state condi-  
tion.  
Both minimum and maximum holding current specifications may  
be important, depending on application. Maximum holding cur-  
rent must be considered if the thyristor is to stay in conduction at  
low principal (anode) current; the minimum holding current must  
be considered if the device is expected to turn off at a low princi-  
pal (anode) current.  
I
(In given Quadrant)  
L
I
L
Operating Mode  
Quadrant II Quadrant III Quadrant IV  
Type  
Quadrant I  
1
4
4
1.2  
1.1  
1
4 A Triac  
10 A Triac  
2.0  
1
1.1  
INITIAL ON-STATE CURRENT = 200 mA dc  
1.5  
Example of a 4 Amp Triac:  
If IL(I) = 10 mA, then  
IL(II) = 40 mA  
IL(III) = 12 mA  
1.0  
.5  
IL(IV) = 11 mA  
Latching current has even somewhat greater temperature depen-  
dence compared to the DC gate trigger current. Applications with  
low temperature requirements should have sufficient principal  
current (anode current) available to ensure thyristor latch-on.  
0
Two key test conditions on latching current specifications are  
gate drive and available principal (anode) current durations.  
Shortening the gate drive duration can result in higher latching  
current values.  
-40  
-15  
+25  
+65  
+100  
Case Temperature (TC) – ˚C  
Figure AN1002.7  
Typical DC Holding Current vs Case Temperatures  
Example of a 10 A triac:  
Holding Current of SCRs and Triacs  
If IH(+) = 10 mA at 25 °C, then  
IH(+) 7.5 mA at 65 °C  
Holding current (IH) is the minimum principal current required to  
maintain the thyristor in the on state. Holding current can best be  
understood by relating it to the “drop-out” or “must release” level  
of a mechanical relay. Figure AN1002.6 shows the sequences of  
gate, latching, and holding currents. Holding current will always  
be less than latching. However, the more sensitive the device,  
the closer the holding current value approaches its latching cur-  
rent value.  
Relationship of Gating, Latching, and  
Holding Currents  
Although gating, latching, and holding currents are independent  
of each other in some ways, the parameter values are related. If  
gating is very sensitive, latching and holding will also be very  
sensitive and vice versa. One way to obtain a sensitive gate and  
not-so-sensitive latching-holding characteristic is to have an  
“amplified gate” as shown in Figure AN1002.8.  
Holding current is independent of gating and latching, but the  
device must be fully latched on before a holding current limit can  
be determined.  
©2002 Teccor Electronics  
Thyristor Product Catalog  
AN1002 - 3  
http://www.teccor.com  
+1 972-580-7777  
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