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CC1111F32RSPR 参数 Datasheet PDF下载

CC1111F32RSPR图片预览
型号: CC1111F32RSPR
PDF下载: 下载PDF文件 查看货源
内容描述: 低功耗低于1 GHz的射频系统级芯片(SoC )与MCU,存储器,收发器和USB控制器 [Low-power sub-1 GHz RF System-on-Chip (SoC) with MCU, memory, transceiver, and USB controller]
分类和应用: 存储射频控制器
文件页数/大小: 240 页 / 2823 K
品牌: TAOS [ TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS ]
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CC1110Fx / CC1111Fx  
7.5 32.768 kHz Crystal Oscillator  
TA = 25 °C, VDD = 3.0V if nothing else is stated.  
Parameter  
Min  
Typ  
32.768  
0.9  
Max  
Unit Condition/Note  
Crystal frequency  
kHz  
Crystal shunt  
capacitance  
2.0  
pF  
Simulated over operating conditions  
Simulated over operating conditions  
Load capacitance  
ESR  
12  
40  
16  
pF  
kΩ  
ms  
130  
Simulated over operating conditions  
Value is simulated  
Start-up time  
400  
Table 13: 32.768 kHz Crystal Oscillator Parameters  
7.6 Low Power RC Oscillator  
TA = 25 °C, VDD = 3.0 V if nothing else is stated.  
Parameter  
Min  
Typ  
Max  
Unit  
Condition/Note  
Calibrated frequency2  
32.0  
34.7  
36.0  
kHz  
Calibrated low power RC oscillator frequency is  
fXOSC / 750  
Frequency accuracy after  
calibration  
±1  
%
Temperature coefficient  
Supply voltage coefficient  
Initial calibration time  
+0.5  
+3  
2
Frequency drift when temperature changes after  
calibration  
%/°C  
%/V  
ms  
Frequency drift when supply voltage changes after  
calibration  
When the low power RC oscillator is enabled,  
calibration is continuously done in the background  
as long as the high speed crystal oscillator is  
running.  
Table 14: Low Power RC Oscillator Parameters  
2 Min figures are given using fXOSC = 24 MHz. Typical figures are given using fXOSC = 26 MHz, and Max  
figures are given using fXOSC = 27 MHz  
SWRS033E  
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