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CC1111F32RSPR 参数 Datasheet PDF下载

CC1111F32RSPR图片预览
型号: CC1111F32RSPR
PDF下载: 下载PDF文件 查看货源
内容描述: 低功耗低于1 GHz的射频系统级芯片(SoC )与MCU,存储器,收发器和USB控制器 [Low-power sub-1 GHz RF System-on-Chip (SoC) with MCU, memory, transceiver, and USB controller]
分类和应用: 存储射频控制器
文件页数/大小: 240 页 / 2823 K
品牌: TAOS [ TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS ]
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CC1110Fx / CC1111Fx  
Parameter  
Blocking  
Min  
Typ  
Max  
Unit Condition/Note  
Blocking at ±2  
MHz offset, 1.2  
kBaud, 868  
MHz  
-45  
dBm Desired channel 3dB above the sensitivity limit.  
dBm Desired channel 3dB above the sensitivity limit  
dBm Desired channel 3dB above the sensitivity limit.  
dBm Desired channel 3dB above the sensitivity limit.  
Unit Condition/Note  
Blocking at ±2  
MHz offset, 250  
kBaud, 868  
MHz  
-50  
-33  
-40  
Typ  
Blocking at ±10  
MHz offset, 1.2  
kBaud, 868  
MHz  
Blocking at ±10  
MHz offset, 250  
kBaud, 868  
MHz  
Parameter  
General  
Min  
Max  
Spurious  
emissions  
Conducted measurement in a 50 single ended load. Complies with EN  
300 328, EN 300 440 class 2, FCC CFR47, Part 15 and ARIB STD-T-66.  
Numbers are from CC1101 (same radio on CC1110 and CC1111)  
Typical radiated spurious emission is -49 dB measured at the VCO  
frequency.  
25 MHz –  
1 GHz  
-68  
-66  
-57  
-47  
dBm Maximum figure is the ETSI EN 300 220 limit  
Above 1 GHz  
dBm Maximum figure is the ETSI EN 300 220 limit  
Table 8: RF Receive Section  
Supply Voltage, VDD = 2 V  
Supply Voltage, VDD = 3 V  
Supply Voltage, VDD = 3.6 V  
Temperature [°C]  
Sensitivity [dBm]  
-40  
25  
85  
-40  
25  
85  
-40  
25  
85  
-96.4  
-94.9  
-92.6  
-96.1  
-95.0  
-92.2  
-96.1  
-94.5  
-92.2  
Table 9: Typical Variation in Sensitivity over Temperature and Supply Voltage @ 433 MHz and 250  
kBaud Data Rate  
SWRS033E  
Page 17 of 239  
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