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CC1111F32RSPR 参数 Datasheet PDF下载

CC1111F32RSPR图片预览
型号: CC1111F32RSPR
PDF下载: 下载PDF文件 查看货源
内容描述: 低功耗低于1 GHz的射频系统级芯片(SoC )与MCU,存储器,收发器和USB控制器 [Low-power sub-1 GHz RF System-on-Chip (SoC) with MCU, memory, transceiver, and USB controller]
分类和应用: 存储射频控制器
文件页数/大小: 240 页 / 2823 K
品牌: TAOS [ TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS ]
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CC1110Fx / CC1111Fx  
7.7 High Speed RC Oscillator  
TA = 25 °C, VDD = 3.0 V if nothing else is stated.  
Parameter  
Min  
Typ  
13  
Max  
Unit  
MHz  
%
Condition/Note  
Calibrated frequency2  
12  
13.5  
Calibrated HS RCOSC frequency is fXOSC / 2  
Uncalibrated frequency  
accuracy  
±15  
Calibrated frequency  
accuracy  
%
±1  
Start-up time  
10  
µs  
Temperature coefficient  
-325  
Frequency drift when temperature changes after  
calibration  
ppm/°C  
Supply voltage coefficient  
Initial calibration time  
28  
ppm/V  
Frequency drift when supply voltage changes after  
calibration  
65  
µs  
The HS RCOSC will be calibrated once when the  
high speed crystal oscillator is selected as system  
clock source (CLKCON.OSCis set to 0), and also  
when the system wakes up from PM{1-3}. See  
13.1.5.1 for details).  
Table 15: High Speed RC Oscillator Parameters  
7.8 Frequency Synthesizer Characteristics  
TA = 25 °C, VDD = 3.0 V if nothing else stated. All measurement results are obtained using the  
CC1110EM reference designs ([1]).  
Parameter  
Min  
Typ  
Max  
Unit  
Condition/Note  
Programmed frequency  
resolution  
367  
397  
412  
Hz  
24 - 27 MHz system clock.  
Frequency resolution = fXOSC / 216  
Synthesizer frequency  
tolerance  
±40  
ppm  
Given by crystal used. Required accuracy (including  
temperature and aging) depends on frequency band and  
channel bandwidth / spacing.  
RF carrier phase noise  
RF carrier phase noise  
RF carrier phase noise  
RF carrier phase noise  
RF carrier phase noise  
RF carrier phase noise  
RF carrier phase noise  
RF carrier phase noise  
PLL turn-on / hop time3  
-92  
-93  
dBc/Hz  
dBc/Hz  
dBc/Hz  
dBc/Hz  
dBc/Hz  
dBc/Hz  
dBc/Hz  
dBc/Hz  
µs  
@ 50 kHz offset from carrier  
@ 100 kHz offset from carrier  
@ 200 kHz offset from carrier  
@ 500 kHz offset from carrier  
@ 1 MHz offset from carrier  
@ 2 MHz offset from carrier  
@ 5 MHz offset from carrier  
@ 10 MHz offset from carrier  
-93  
-98  
-107  
-113  
-119  
-129  
88.4  
85.1  
95.8  
Time from leaving the IDLE state until arriving in the RX,  
FSTXON, or TX state, when not performing calibration.  
Crystal oscillator running.  
PLL RX/TX settling time3  
PLL TX/RX settling time3  
PLL calibration time3  
9.3  
20.7  
694  
9.6  
21.5  
721  
10.4  
23.3  
Settling time for the 1·IF frequency step from RX to TX  
Settling time for the 1·IF frequency step from TX to RX  
µs  
µs  
µs  
780.8  
Calibration can be initiated manually or automatically  
before entering or after leaving RX/TX.  
Table 16: Frequency Synthesizer Parameters  
3
Min figures are given using fXOSC = 27 MHz. Typ figures are given using fXOSC = 26 MHz, and Max  
figures are given using fXOSC = 24 MHz.  
SWRS033E  
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