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HV312 参数 Datasheet PDF下载

HV312图片预览
型号: HV312
PDF下载: 下载PDF文件 查看货源
内容描述: 测序热插拔控制器 [Sequencing Hotswap Controllers]
分类和应用: 控制器
文件页数/大小: 10 页 / 576 K
品牌: SUPERTEX [ Supertex, Inc ]
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HV302 / HV312  
Functional Block Diagram  
Vint  
VDD  
Internal  
Supply  
Regulator  
UVLO  
and  
PWRGD-D  
PWRGD-C  
PWRGD-B  
PWRGD-A  
POR  
Band Gap  
Reference  
Vbg  
Programmable  
Timer  
UV  
OV  
LOGIC  
C
Vbg  
C
555 type  
Auto-Retry  
Timer  
Vint  
10uA  
Vint-1.2V  
Latch High & Sleep  
C
Transconductor  
1 : 2 Mirror  
gm  
Selector  
Switch  
100mV  
2Vbg  
Transconductor  
C
Buffer  
gm  
Circuit Breaker  
Selector  
Switch  
5k  
5k  
VEE  
Clamp Mechanism  
SENSE  
RAMP  
GATE  
TB TC TD  
Functional Description  
Insertion into Hot Backplanes  
In Servo Mode operation, assuming the UV and OV limits are  
satisfied and while continuing to hold the PWRGD flags inactive  
and the external MOSFET GATE voltage low, the current source  
feeding the RAMP pin is turned on. The external ramp capacitor  
connected to it begins to charge, thus starting an initial time delay  
determined by the value of the capacitor and the 2Vbg threshold  
voltage of the RAMP pin. During this time if the OV or UV limits  
are exceeded, an immediate reset occurs and the capacitor  
connected to the RAMP pin is discharged.  
Telecom, Networking, SAN and Server applications require the  
ability to insert and remove circuit cards from systems without  
powering down the entire system. All circuit cards have some filter  
capacitance on the power rails, which is especially true in circuit  
cards or network terminal equipment utilizing distributed power  
systems. The insertion can result in high inrush currents that can  
cause damage to connector and circuit cards and may result in  
unacceptable disturbances on the system backplane power rails.  
The HV302 and HV312 are designed to facilitate the insertion of  
these circuit cards or connection of terminal equipment by  
eliminating these inrush currents and powering up these circuits in  
a controlled manner after full connector insertion has been  
achieved  
When the voltage on the RAMP pin exceeds the 2Vbg threshold  
voltage, the gate drive circuit begins to apply voltage to the gate of  
the external MOSFET, which begins to turn on when its gate  
threshold voltage is reached.  
The resulting output current  
generates a voltage drop on the sense resistor connected between  
the SENSE and VEE pins, causing a decrease in the available  
current charging the capacitor on the RAMP pin. This continuous  
feedback mechanism allows the output current to rise inverse  
exponentially over a period of a few hundred microseconds to the  
sense resistor programmed current limit set point.  
Description of Operation  
During initial power application, a “normally-on” circuit holds off the  
external MOSFET, preventing an input glitch while an integrated  
regulator establishes an internal operating voltage of  
approximately 10V. Until the proper internal voltage is achieved all  
circuits are held reset, the PWRGD flags are inactive and the gate  
to source voltage of the external MOSFET is clamped low.  
When the voltage drop on the sense resistor reaches 50mV the  
RAMP pin current is reduced to zero and the voltage on the RAMP  
pin will be fixed, indicating that the circuit is in current limit mode.  
Depending on the value of the load capacitor and the programmed  
current limit, charging may continue for some time, but may not  
exceed a nominal 100ms preset time limit. Once the load  
capacitor has been charged, the output current will drop, reducing  
the voltage on the SENSE pin, which in turn will increase the  
RAMP pin current, thus causing the voltage on the capacitor  
connected to the RAMP pin to continue rising, thereby providing  
yet another programmed delay.  
Once the internal under voltage lock out (UVLO) has been  
satisfied, the circuit checks the input supply under voltage (UV)  
and over voltage (OV) sense circuits to ensure that the input  
voltage is within programmed limits. These limits are determined  
by the selected values of resistors R1, R2 and R3, which form a  
voltage divider.  
4
Rev. D  
04/17/02  
Supertex, Inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 Fax: (408) 222-4895 www.supertex.com  
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