HV300
___________________________________________________________________________________________
Electrical Characteristics
(-40°C
!
T
A
!
+85°C unless otherwise noted)
Symbol
Parameter
Min
Typ
Max
Units
Conditions
Supply
(Referenced to V
DD
pin)
V
EE
I
EE
I
EE
Supply Voltage
Supply Current
Standby Mode Supply Current
-90
550
330
-10
650
400
V
µA
µA
V
EE
= -48V, Mode = Limiting
V
EE
= -48V, Mode = Standby
OV and UV Control
(Referenced to V
EE
pin)
V
UVH
V
UVL
V
UVH
I
UV
V
OVH
V
OVL
V
OVH
I
OV
UV High Threshold
UV Low Threshold
UV Hysteresis
UV Input Current
OV High Threshold
OV Low Threshold
OV Hysteresis
OV Input Current
1.26
1.16
100
1
1.26
1.16
100
1
V
V
mV
nA
V
V
mV
nA
V
OV
= V
EE
+ 0.5V
V
UV
= V
EE
+ 1.9V
Low to High Transition
High to Low Transition
Low to High Transition
High to Low Transition
Current Limit
(Referenced to V
EE
pin)
V
SENSE
R
SENSE
Current Limit Threshold Voltage
Sense Resistor Value (SENSE to V
EE
)
40
50
50
60
mV
mΩ
V
UV
= V
EE
+ 1.9V, V
OV
= V
EE
+ 0.5V
For 1A Current Limit
Gate Drive Output
(Referenced to V
EE
pin)
V
GATE
I
GATEUP
I
GATEDOWN
Maximum Gate Drive Voltage
Gate Drive Pull-Up Current
Gate Drive Pull-Down Current
9
500
40
10
11
V
µA
mA
V
UV
= V
EE
+ 1.9V, V
OV
= V
EE
+ 0.5V
V
UV
= V
EE
+ 1.9V, V
OV
= V
EE
+ 0.5V,
V
GATE
= V
EE
V
UV
= V
EE
, V
OV
= V
EE
+ 0.5V, V
GATE
=
V
EE
+ 4V
Timing Control -
Test Conditions: C
LOAD
=100µF, C
RAMP
=10nF, V
UV
= V
EE
+ 1.9V, V
OV
= V
EE
+ 0.5V, External MOSFET is IRF530*
I
RAMP
t
POR
t
RISE
t
LIMIT
t
PWRGD
V
RAMP
Ramp Pin Output Current
Time from UV to Gate Turn On
Time from Gate Turn On to V
SENSE
Limit
Duration of Current Limit Mode
Time from Current Limit to PWRGD
Voltage on Ramp Pin in Current Limit Mode
2
400
<5
5
3.6
10
µA
ms
µs
ms
ms
V
(Note 2)
(Note 1)
Power Good Output
(Referenced to V
EE
pin)
V
PWRGD
V
PWRGD
Power Good Pin Breakdown Voltage
Power Good Pin Output Low Voltage
90
0.5
0.8
V
V
I
PWRGD
= 1mA
Dynamic Characteristics
t
GATEHLOV
t
GATEHLUV
Note 1:
OV Comparator Transition
UV Comparator Transition
<500
<500
ns
ns
This timing depends on the threshold voltage of the external N-Channel MOSFET. The higher its threshold is, the longer this
timing.
This voltage depends on the characteristics of the external N-Channel MOSFET.
V
to
= 3V for an IRF530.
Note 2:
*IRF530 is a registered trademark of International Rectifier.
Prepared by the Telecom Group
2 of 5
Rev. E
7/19/2001
_________________________________________________________________ ______________________________________________
Supertex, Inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 FAX: (408) 222-4895 www.supertex.com
SUPERTEX [ Supertex, Inc ]
