SMH4812
Preliminary
APPLICATIONS CIRCUITS
0V
0V
10nF
100V
R
6.8kΩ
D
EN/TS
R3
R2
MMBTA-
06LT1
UV
SMH4812
PG#
OV
MMBD-
1401
47kΩ
10kΩ
PD1#
PD2#
FAULT#
10kΩ
5V
REF
R1
100nF
50V
100nF
100nF
50V
R
68kΩ
100µF
100V
T
1kΩ
*10Ω
10nF
100V
R
20mΩ
S
MMBD1401
–48V
–48V
2055 Fig06
Figure 6. Changing Polarity of Power Good Output (PG#)
Note: Figures 6 through 9 — the *10Ω resistor must be located as close as possible to the MOSFET
SUMMIT MICROELECTRONICS, Inc.
2055 4.0 12/22/00
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