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VNP35N07-E 参数 Datasheet PDF下载

VNP35N07-E图片预览
型号: VNP35N07-E
PDF下载: 下载PDF文件 查看货源
内容描述: “ OMNIFET ” :全AUTOPROTECTED功率MOSFET ["OMNIFET": FULLY AUTOPROTECTED POWER MOSFET]
分类和应用: 外围驱动器驱动程序和接口接口集成电路PC局域网
文件页数/大小: 11 页 / 289 K
品牌: STMICROELECTRONICS [ ST ]
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VNP35N07  
PROTECTION FEATURES  
During normal operation, the Input pin is  
electrically connected to the gate of the internal  
power MOSFET. The device then behaves like a  
standard power MOSFET and can be used as a  
switch from DC to 50 KHz. The only difference  
from the user’s standpoint is that a small DC  
current (Iiss) flows into the Input pin in order to  
supply the internal circuitry.  
- OVERTEMPERATURE AND SHORT CIRCUIT  
PROTECTION: these are based on sensing  
the chip temperature and are not dependent on  
the input voltage. The location of the sensing  
element on the chip in the power stage area  
ensures fast, accurate detection of the junction  
temperature. Overtemperature cutout occurs at  
minimum 150oC. The device is automatically  
restarted when the chip temperature falls  
below 135oC.  
The device integrates:  
- OVERVOLTAGE  
CLAMP  
PROTECTION:  
internally set at 70V, along with the rugged  
avalanche characteristics of the Power  
MOSFET stage give this device unrivalled  
ruggedness and energy handling capability.  
This feature is mainly important when driving  
inductive loads.  
- STATUS FEEDBACK: In the case of an  
overtemperature fault condition,  
a Status  
Feedback is provided through the Input pin.  
The internal protection circuit disconnects the  
input from the gate and connects it instead to  
ground via an eqvalent resistance of 100 .  
The failure can be detected by monitoring the  
voltage at thInput pin, which will be close to  
ground ptential.  
- LINEAR CURRENT LIMITER CIRCUIT: limits  
the drain current Id to Ilim whatever the Input  
pin voltage. When the current limiter is active,  
the device operates in the linear region, so  
power dissipation may exceed the capability of  
the heatsink. Both case and junction  
temperatures increase, and if this phase lasts  
long enough, junction temperature may reach  
the overtemperature threshold Tjsh.  
Additioal features of this device are ESD  
protection according to the Human Body model  
ad the ability to be driven from a TTL Logic  
circuit (with a small increase in RDS(on)).  
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