VN5010AK-E
Electrical specifications
2.2
Electrical characteristics
Values specified in this section are for 8V< V < 36V; -40°C< T < 150°C, unless otherwise
CC
j
stated (for each channel).
Table 6.
Symbol
Power section
Parameter
Test conditions
Min. Typ. Max. Unit
Operating supply
voltage
VCC
VUSD
VUSDhyst
4.5
13
3.5
0.5
36
V
V
V
Undervoltage
shutdown
4.5
Undervoltage
shutdown hysteresis
I
OUT= 6A; Tj= 25°C
10
20
mΩ
mΩ
RON
On state resistance
IOUT= 6A; Tj= 150°C
Vclamp Clamp voltage
ICC= 20 mA
41
46
52
V
Off State; VCC= 13V; Tj= 25°C;
VIN=VOUT=VSENSE=VCSD=0V
IS
IL(off)
VF
Supply current
2(1)
5(1)
µA
µA
VIN=VOUT=0V; VCC= 13V; Tj= 25°C
VIN=VOUT=0V; VCC= 13V; Tj= 125°C
0
0
0.01
3
5
Off state output
current
Output - VCC diode
voltage
-IOUT= 10A; Tj= 150°C
0.7
V
1. PowerMOS leakage included.
.
Table 7.
Symbol
Switching (V =13V)
CC
Parameter
Test conditions
RL= 2.6Ω (see Figure 8.)
RL= 2.6Ω (see Figure 8.)
Min.
Typ.
Max. Unit
td(on)
td(off)
Turn-On delay time
Turn-Off delay time
35
65
µs
µs
Turn-On voltage
slope
See
Figure 20
(dVOUT/dt)on
(dVOUT/dt)off
WON
RL= 2.6Ω
V/ µs
V/ µs
mJ
Turn-Off voltage
slope
See
Figure 22
RL= 2.6Ω
Switching energy
losses during twon
RL= 2.6Ω (see Figure 8.)
RL= 2.6Ω (see Figure 8.)
1.5
0.8
Switching energy
losses during twoff
WOFF
mJ
9/31
STMICROELECTRONICS [ ST ]
