TEA2025B - TEA2025D
POWERDIP 12+2+2 PIN CONNECTION (Top view)
BRIDGE
OUT.2
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
+Vs
OUT.1
BOOT.2
GND
BOOT.1
GND
GND
GND
FEEDBACK
IN.2 (+)
SVR
FEEDBACK
IN.1 (+)
GND (sub.)
9
SO 12+4+4 PIN CONNECTION (Top view)
BRIDGE
OUT 2
BOOT 2
GND
1
2
20
VCC
19
18
17
16
15
14
13
12
11
OUT 1
BOOT 1
GND
3
4
GND
5
GND
GND
6
GND
GND
7
GND
FEEDBACK
IN 2(+)
SVR
8
FEEDBACK
IN 1(+)
GND(Sub)
9
10
D94AU119
THERMAL DATA
Symbol
Description
SO 12+4+4 (*)
PDIP 12+2+2 (**)
Unit
Rth j-case Thermal Resistance Junction-case
Rth j-amb Thermal Resistance Junction-ambient
Max
Max
15
65
15
60
°C/W
°C/W
(*) The Rth j-amb is measured with 4sq cm copper area heatsink
(**) The Rth j-amb is measured on devices bonded on a 10 x 5 x 0.15cm glass-epoxy substrate with a 35µm thick copper surface of 5 cm2.
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STMICROELECTRONICS [ ST ]
