TDA9511
(VCC = 12V, VDD = 110V,Tamb = 25oC, unless otherwise specified)
ELECTRICAL CHARACTERISTICS
Symbol
VDD
Parameter
High Supply Voltage (Pin 7)
Low Supply Voltage (Pin 2)
Test Conditions
Min.
20
Typ.
Max. Unit
110
15
V
V
VCC
10
12
9
IDD
DC Current of High Voltage Supply VOUT = 60V
(without feedback current)
mA
ICC
VREF
VIN
Low Voltage Supply Internal DC Current
Internal Reference (Pin 3)
15
3.2
mA
V
Input Voltage
VOUT = 60V
3.25
0.12
0.5
V
dVIN/dVCC Drift of Input Voltage versus VCC
Measured on Pin 1
%
mV/oC
dVIN/dT Driftof Input Voltage versus Temperature
VSATH
VSATL
ELin
OS
High Output Saturation Voltage (Pin 6)
Low Output Saturation Voltage (Pin 6)
Linearity Error
IO = -60mA
VDD - 8.5
12
V
IO = 60mA
V
17V < VOUT < VDD - 15V
5
%
Overshoot
5
%
BW
Bandwidth at -3dB
Measured on CRT cathodes.
40
MHz
CLOAD = 10pF, Rprotect = 220Ω,
VOUT= 60V, ∆VOUT = 20VPP
,
Feedback gain = 20
tR, tF
Rise and Fall Time
Open Loop Gain
Measured between 10% & 90%
of output pulse,
9
ns
CLOAD = 10pF, Rprotect = 220Ω,
VOUT = 60V, ∆VOUT = 40VPP
GO
VOUT = 60V
60
dB
Open Loop Gain Temperature
Coefficient
0.03
dB/oC
IIB
Input Bias Current (Pin 1)
Input Bias Temperature Coefficient
Input Resistance
VOUT = 60V
See Note 2
20
90
30
µA
nA/oC
kΩ
RIN
200
Note 2 : Characterized and not tested.
Figure 1 : Measurement of Input Voltage
VOUT
R2
VIN
=
(1 + R2/R1)
R1
VIN
VOUT
3/5
STMICROELECTRONICS [ ST ]
