STTH200L06TV
Figure 7: Reverse recovery softness factor
Figure 8: Relative variations of dynamic
parameters versus junction temperature
versus dI /dt (typical values, per diode)
F
S factor
1.6
1.4
IF< 2 x IF(AV)
VR=400V
Tj=125°C
1.4
1.2
1.0
0.8
0.6
0.4
0.2
S factor
1.2
1.0
0.8
0.6
QRR
IF=IF(AV)
VR=400V
Reference: Tj=125°C
trr
IRM
0.4
0.2
0.0
T (°C)
j
dI /dt(A/µs)
F
0.0
25
50
75
100
125
0
50
100
150
200
250
300
350
400
450
500
Figure 9: Transient peak forward voltage
versus dI /dt (typical values, per diode)
Figure 10: Forward recovery time versus dI /dt
(typical values, per diode)
F
F
t (ns)
fr
V
(V)
FP
600
8
7
6
5
4
3
2
1
0
IF=IF(AV)
VFR=1.1 x VF max.
Tj=125°C
IF=IF(AV)
Tj=125°C
550
500
450
400
350
300
250
200
150
100
50
dI /dt(A/µs)
F
dI /dt(A/µs)
F
0
0
50
100
150
200
250
300
350
400
450
500
0
100
200
300
400
500
Figure 11: Junction capacitance versus
reverse voltage applied (typical values, per
diode)
C(pF)
10000
F=1MHz
VOSC=30mVRMS
Tj=25°C
1000
100
V (V)
R
10
1
10
100
1000
4/6
STMICROELECTRONICS [ ST ]
