STTH200L06TV
Figure 1: Conduction losses versus average
forward current (per diode)
Figure 2: Forward voltage drop versus forward
current (per diode)
I
(A)
FM
P(W)
200
180
160
140
120
100
80
200
Tj=150°C
(maximum values)
180
δ = 0.5
δ = 0.2
160
δ = 0.1
140
Tj=150°C
(typical values)
120
δ = 1
δ = 0.05
100
Tj=25°C
(maximum values)
80
60
60
T
40
20
40
20
tp
=tp/T
δ
I (A)
F(AV)
V (V)
FM
0
0
0
20
40
60
80
100
120
140
160
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Figure 3: Relative variation of thermal
impedance junction to case versus pulse
duration
Figure 4: Peak reverse recovery current versus
dI /dt (typical values, per diode)
F
Z
/R
I
(A)
RM
th(j-c) th(j-c)
60
50
40
30
20
10
0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
VR=400V
Tj=125°C
IF=2 x IF(AV)
IF=IF(AV)
IF=0.5 x IF(AV)
Single pulse
dI /dt(A/µs)
F
t (s)
p
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
0
50
100
150
200
250
300
350
400
450
500
Figure 5: Reverse recovery time versus dI /dt
Figure 6: Reverse recovery charges versus
F
(typical values, per diode)
dI /dt (typical values, per diode)
F
t (ns)
rr
Q (nC)
rr
1400
5.0
VR=400V
Tj=125°C
VR=400V
Tj=125°C
4.5
1200
1000
IF=2 x IF(AV)
4.0
3.5
IF=2 x IF(AV)
IF=IF(AV)
3.0
800
2.5
IF=0.5 x IF(AV)
600
400
200
0
IF=IF(AV)
2.0
IF=0.5 x IF(AV)
1.5
1.0
0.5
dI /dt(A/µs)
F
dI /dt(A/µs)
F
0.0
0
100
200
300
400
500
0
50
100
150
200
250
300
350
400
450
500
3/6
STMICROELECTRONICS [ ST ]
