STTH200L06TV
Table 4: Thermal Resistance
Symbol
Parameter
Value (max).
0.60
Unit
R
Junction to case
Per diode
Total
°C/W
th(j-c)
0.35
R
Coupling
0.1
°C/W
th(c)
When the diodes 1 and 2 are used simultaneously:
∆ Tj(diode 1) = P(diode 1) x R (Per diode) + P(diode 2) x R
th(j-c)
th(c)
Table 5: Static Electrical Characteristics (per diode)
Symbol Parameter Test conditions
I * Reverse leakage current T = 25°C V = V
RRM
Min.
Typ
Max.
Unit
100
µA
R
j
R
T = 125°C
100
1000
1.55
1.2
j
V ** Forward voltage drop
T = 25°C
I = 100A
V
F
j
F
T = 150°C
0.95
j
Pulse test:
* tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
2
To evaluate the conduction losses use the following equation: P = 0.93 x I
+ 0.0027 I
F(AV)
F (RMS)
Table 6: Dynamic Characteristics (per diode)
Symbol
Parameter
Test conditions
Min. Typ Max. Unit
t
Reverse recovery T = 25°C I = 0.5A Irr = 0.25A I =1A
80
ns
rr
j
F
R
time
I = 1A dI /dt = 50 A/µs V =30V
85 120
F
F
R
I
Reverse recovery T = 125°C I = 100A
V = 400V
15
20
A
ns
V
RM
j
F
R
current
dI /dt = 100 A/µs
F
t
Forward recovery T = 25°C I = 100A
dI /dt = 200 A/µs
700
fr
j
F
F
time
V
= 1.1 x V
Fmax
FR
V
Forward recovery T = 25°C I = 100A dI /dt = 200 A/µs
3.4
FP
j
F
F
voltage
V
= 1.1 x V
Fmax
FR
2/6
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