Characteristics
STPS30120C
Figure 6.
Non repetitive surge peak forward Figure 7.
Relative variation of thermal
current versus overload duration
(maximum values, per diode)
impedance junction to ambient
versus pulse duration
I
M
(A)
Z
/R
th(j-c) th(j-c)
180
160
140
120
100
80
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
δ = 0.5
Tc=25°C
Tc=75°C
60
δ = 0.2
δ = 0.1
T
40
Tc=125°C
IM
Single pulse
20
t
t (s)
p
tp
1.E+00
=tp/T
δ
δ=0.5
t(s)
0
1.E-03
1.E-02
1.E-01
1.E+00
1.E-03
1.E-02
1.E-01
Figure 8.
Reverse leakage current versus
reverse voltage applied
Figure 9.
Junction capacitance versus
reverse voltage applied
(typical values, per diode)
(typical values, per diode)
I (mA)
C(pF)
R
1.E+02
1.E+01
1.E+00
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
1000
F=1MHz
VOSC=30mVRMS
Tj=25°C
Tj=150°C
Tj=125°C
Tj=100°C
Tj=75°C
100
Tj=50°C
Tj=25°C
V (V)
R
V (V)
R
10
1
0
10
20
30
40
50
60
70
80
90
100 110 120
10
100
Figure 10. Forward voltage drop versus
forward current (per diode)
Figure 11. Reverse safe operating area
(t < 1 µs and T < 150 °C)
p
j
Iarm (A)
I (A)
FM
18
17
16
15
100
10
1
Tj=125°C
(maximum values)
Tj=125°C
(typical values)
Tj=25°C
(maximum values)
14
13
12
11
V
(V)
FM
Varm (V)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
160
170
120
150
140
130
4/8
Doc ID 11213 Rev 3
STMICROELECTRONICS [ ST ]
