Characteristics
STPS30120C
1
Characteristics
Table 2.
Symbol
Absolute ratings (limiting values, per diode)
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
120
30
V
A
IF(RMS) Forward rms current
δ = 0.5
Tc = 145 °C
Per diode
Per device
15
30
Average forward
current
IF(AV)
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
tp = 1 µs Tj = 25 °C
180
A
PARM Repetitive peak avalanche power
6700
W
Maximum repetitive
peak avalanche voltage
(1)
(1)
VARM
tp = 1 µs, Tj < 150 °C, IAR < 13.4 A
tp = 1 µs, Tj < 150 °C, IAR < 13.4 A
150
150
V
V
Maximum single pulse
peak avalanche voltage
VASM
Tstg
Tj
Storage temperature range
-65 to + 175
175
°C
°C
Maximum operating junction temperature(2)
1. Refer to Figure 11
1
dPtot
dTj
<
2.
condition to avoid thermal runaway for a diode on its own heatsink
Rth(j-a)
Table 3.
Symbol
Thermal parameters
Parameter
Value
Unit
Per diode
Total
2.2
1.3
Rth(j-c) Junction to case
Rth(c) Coupling
°C/W
°C/W
Total
0.3
When the diodes 1 and 2 are used simultaneously :
T (diode 1) = P(diode 1) x Rth(j-c)(per diode) + P(diode 2) x Rth(c)
j
2/8
Doc ID 11213 Rev 3
STMICROELECTRONICS [ ST ]
