STPS30120C
Characteristics
Table 4.
Symbol
Static electrical characteristics (per diode)
Test conditions
Tj = 25 °C
Min.
Typ.
Max.
Unit
15
µA
(1)
IR
Reverse leakage current
VR = VRRM
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
2.5
0.57
0.7
7.5
mA
0.74
0.61
0.92
0.74
1.02
0.89
IF = 5 A
(2)
VF
Forward voltage drop
IF = 15 A
IF = 30 A
V
0.83
1. Pulse test : tp = 5 ms, δ < 2%
2. Pulse test : tp = 380 μs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
2
P = 0.59 x I
+ 0.01 I
F(AV)
F (RMS)
Figure 2.
Average forward power
dissipation versus average forward
current (per diode)
Figure 3.
Average forward current versus
ambient temperature
(δ = 0.5, per diode)
I (A)
F(AV)
P
(W)
F(AV)
18
16
14
12
10
8
15
14
13
12
11
10
9
δ = 0.2
δ = 0.1
δ = 0.5
Rth(j-a)=Rth(j-c)
δ = 0.05
δ = 1
8
Rth(j-a)=15°C/W
7
6
5
6
4
T
T
4
3
2
2
1
I
(A)
F(AV)
T (°C)
amb
tp
=tp/T
δ
tp
=tp/T
δ
0
0
0
2
4
6
8
10
12
14
16
18
0
25
50
75
100
125
150
175
Figure 4.
Normalized avalanche power
derating versus pulse duration
Figure 5.
Normalized avalanche power
derating versus junction
temperature
PARM(Tj)
PARM(t )
p
PARM(25 °C)
PARM(1µs)
1.2
1
1
0.1
0.8
0.6
0.4
0.2
0
0.01
Tj(°C)
tp(µs)
1000
0.001
0.01
0.1
1
10
100
150
25
50
75
100
125
Doc ID 11213 Rev 3
3/8
STMICROELECTRONICS [ ST ]
