STPS20H100CT/CF/CG/CG-1
Fig. 7-1:
Relative variation of thermal impedance
junction to case versus pulse duration (per diode)
(TO-220AB, D
2
PAK, I
2
PAK).
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6
0.4
0.2
0.0
1E-3
δ
= 0.5
Fig. 7-2:
Relative variation of thermal impedance
junction to case versus pulse duration (per diode)
(ISOWATT220AB, TO-220FPAB).
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6
0.4
T
δ
= 0.5
δ
= 0.2
δ
= 0.1
Single pulse
δ
= 0.2
0.2
tp(s)
1E-2
1E-1
δ
=tp/T
tp
δ
= 0.1
Single pulse
tp(s)
1E+0
0.0
1E-2
1E-1
1E+0
1E+1
Fig. 8:
Reverse leakage current versus reverse
voltage applied (typical values, per diode).
IR(µA)
Fig. 9:
Junction capacitance versus reverse
voltage applied (typical values, per diode).
C(pF)
1000
1E+4
1E+3
1E+2
1E+1
1E+0
1E-1
1E-2
Tj=150°C
F=1MHz
Tj=25°C
Tj=125°C
Tj=100°C
500
Tj=25°C
200
VR(V)
0
10
20
30
40
50
60
70
80
90 100
100
1
2
5
VR(V)
10
20
50
100
Fig. 10:
Forward voltage drop versus forward
current (maximum values, per diode).
Fig. 11:
Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed circuit
board FR4, copper thickness: 35µm) (D
2
PAK).
Rth(j-a) (°C/W)
80
70
100.0
IFM(A)
10.0
Tj=150°C
Typical values
Tj=125°C
60
50
40
Tj=25°C
Tj=125°C
Typical values
1.0
30
20
10
0.1
0.0
VFM(V)
0.2
0.4
0.6
0.8
1.0
1.2
S(Cu) (cm²)
0
5
10
15
20
25
30
35
40
0
4/8
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