STPS20H100CT/CF/CG/CR/CFP
Fig. 1:
Average forward power dissipation versus
average forward current (per diode).
PF(av)(W)
8
6
4
2
IF(av) (A)
0
0
2
4
6
8
δ
=tp/T
T
Fig. 2:
Average forward current versus ambient
temperature (δ=0.5, per diode).
IF(av)(A)
δ
= 0.05
δ
= 0.1
δ
= 0.2
δ
= 0.5
12
Rth(j-a)=Rth(j-c)
TO220AB
10
δ
=1
8
6
4
2
tp
Rth(j-a)=15°C/W
Rth(j-a)=40°C/W
ISOWATT220AB
TO-220FPAB
T
δ
=tp/T
tp
Tamb(°C)
50
75
100
125
150
175
0
10
12
0
25
Fig. 3:
Normalized avalanche power derating
versus pulse duration.
P
ARM
(t
p
)
P
ARM
(1µs)
1
Fig. 4:
Normalized avalanche power derating
versus junction temperature.
P
ARM
(t
p
)
P
ARM
(25°C)
1.2
1
0.1
0.8
0.6
0.01
0.4
0.2
0.001
0.01
0.1
1
t
p
(µs)
10
100
1000
T
j
(°C)
0
0
25
50
75
100
125
150
Fig. 5:
Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode) (TO-220AB, D
2
PAK, I
2
PAK)
IM(A)
200
180
160
140
120
100
80
60
40
I
M
20
0
1E-3
Fig. 6:
Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode) (ISOWATT220AB, TO-220FPAB).
IM(A)
140
120
100
Tc=50°C
Tc=75°C
Tc=125°C
80
60
Tj=50°C
Tj=75°C
40
I
M
20
t
Tj=125°C
t
δ
=0.5
t(s)
1E-2
1E-1
1E+0
0
1E-3
δ
=0.5
t(s)
1E-2
1E-1
1E+0
3/8
STMICROELECTRONICS [ STMICROELECTRONICS ]
