®
STPS20H100CT/CF/CG/CR/CFP
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
Tj
V
F
(max)
FEATURES AND BENEFITS
A2
s
2 x 10 A
100 V
175°C
0.64 V
A1
K
A2
A2
A1
K
s
s
s
s
s
s
NEGLIGIBLE SWITCHING LOSSES
HIGH JUNCTION TEMPERATURE CAPABILITY
GOOD TRADE OFF BETWEEN LEAKAGE CUR-
RENT AND FORWARD VOLTAGE DROP
LOW LEAKAGE CURRENT
AVALANCHE RATED
INSULATED PACKAGE: ISOWATT220AB,
TO-220FPAB
Insulating Voltage = 2000V DC
Capacitance = 45 pF
AVALANCHE CAPABILITY SPECIFIED
A1
K
TO-220AB
STPS20H100CT
ISOWATT220AB
STPS20H100CF
A2
K
A1
A1
A2
K
TO-220FPAB
STPS20H100CFP
K
DESCRIPTION
Dual center tap schottky rectifier designed for
high frequency miniature Switched Mode
Power Supplies such as adaptators and on
board DC/DC converters.
ABSOLUTE RATINGS
(limiting values, per diode)
Symbol
V
RRM
I
F(RMS)
I
F(AV)
RMS forward current
Average forward
current
δ
= 0.5
TO-220AB
D
2
PAK / I
2
PAK
Parameter
Repetitive peak reverse voltage
I
2
PAK
STPS20H100CR
A1
A2
D
2
PAK
STPS20H100CG
Value
100
30
Unit
V
A
A
Tc = 160°C
per diode
per device
10
20
ISOWATT220AB Tc = 145°C
TO-220FPAB
I
FSM
I
RRM
I
RSM
P
ARM
T
stg
Tj
dV/dt
* :
Surge non repetitive forward current
Repetitive peak reverse current
Non repetitive peak reverse current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
tp = 10 ms sinusoidal
tp = 2 µs square F = 1kHz
tp = 100 µs square
tp = 1µs
Tj = 25°C
250
1
3
10800
- 65 to + 175
175
10000
A
A
A
W
°C
°C
V/µs
dPtot
1
thermal runaway condition for a diode on its own heatsink
<
dTj
Rth
(
j
−
a
)
1/8
July 2003 - Ed: 4G
STMICROELECTRONICS [ STMICROELECTRONICS ]
