STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
V
DS
V
GS
I
D
I
D
I
DM (2)
P
TOT
I
AR
E
AS
V
ESD(G-S)
dv/dt
(3)
V
ISO
T
stg
T
j
Absolute maximum ratings
Value
Parameter
TO-220 DPAK D²PAK TO-220FP
Drain-source voltage (V
GS
= 0)
Gate- source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Avalanche current, repetitive or not-
repetitive (pulse width limited by T
j
max)
Single pulse avalanche energy
(starting T
j
= 25°C, I
D
= I
AR
, V
DD
= 50V)
Gate source ESD(HBM-C = 100 pF,
R = 1.5 kΩ)
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t = 1 s; T
C
= 25 °C)
Storage temperature
Max. operating junction temperature
-55 to 150
150
6.2
4.5
24.8
90
6.2
100
2500
12
2500
525
± 30
6.2
(1)
4.5
(1)
24.8
(1)
25
V
V
A
A
A
W
A
mJ
V
V/ns
V
°C
°C
Unit
1. Limited by package
2. Pulse width limited by safe operating area
3. I
SD
≤
6.3 A, di/dt = TBD, V
DD
= 80% V
(BR)DSS.
Table 3.
Symbol
R
thj-case
R
thj-pcb
R
thj-amb
T
l
Thermal data
Value
Parameter
TO-220 DPAK D²PAK TO-220FP
Thermal resistance junction-case max
Thermal resistance junction-pcb max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
62.5
300
1.39
50
30
62.5
5
°C/W
°C/W
°C/W
°C
Unit
Doc ID 14896 Rev 2
3/18
STMICROELECTRONICS [ STMICROELECTRONICS ]
