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STP7N52K3 参数 Datasheet PDF下载

STP7N52K3图片预览
型号: STP7N52K3
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道525 V, 0.84欧姆, 6.2 A, D2PAK , DPAK , TO- 220FP , TO- 220 SuperMESH3功率MOSFET [N-channel 525 V, 0.84 OHM, 6.2 A, D2PAK, DPAK, TO-220FP, TO-220 SuperMESH3 Power MOSFET]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲局域网
文件页数/大小: 18 页 / 1197 K
品牌: STMICROELECTRONICS [ STMICROELECTRONICS ]
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Electrical characteristics
STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3
Figure 14. Gate charge vs gate-source voltage Figure 15. Normalized on resistance vs
temperature
V
GS
(V)
12
10
8
6
4
100
2
0
0
5
10
15
20
25
30
35
50
0
Q
g
(nC)
0.5
0.0
-50 -25 0 25 50 75 100 125 150 T
J
(°C)
AM05406v1
V
DS
V
DD
=420V
I
D
=6A
V
GS
R
DS(on)
(norm)
2.5
AM05408v1
400
350
300
250
200
150
1.5
1.0
2.0
Figure 16. Normalized gate threshold voltage
vs temperature
V
GS(th)
(norm)
1.10
AM05407v1
Figure 17. Maximum avalanche energy vs
temperature
E
AS
(mJ)
100
90
80
70
60
I
D
=6.2 A
V
DD
=50 V
AM05409v1
1.00
0.90
50
40
30
20
10
0
0
0.80
0.70
-50 -25 0 25 50 75 100 125 150 T
J
(°C)
20
40
60
80
100 120 140 T
J
(°C)
Figure 18. Source-drain diode forward
characteristics
V
SD
(V)
0.9
0.8
0.7
0.6
0.5
T
J
=150°C
0.4
0.3
0
1
2
3
4
5
6
7
8
I
SD
(A)
AM05410v1
T
J
=-50°C
T
J
=25°C
8/18
Doc ID 14896 Rev 2