STB7N52K3, STD7N52K3
STF7N52K3, STP7N52K3
N-channel 525 V, 0.84
Ω,
6.2 A, D
2
PAK, DPAK, TO-220FP, TO-220
SuperMESH3™ Power MOSFET
Features
Type
STB7N52K3
STD7N52K3
STF7N52K3
STP7N52K3
V
DSS
525 V
525 V
525 V
525 V
R
DS(on)
max
< 0.98
Ω
< 0.98
Ω
< 0.98
Ω
< 0.98
Ω
I
D
6.2 A
6.2 A
6.2 A
(1)
6.2 A
Pw
3
3
90 W
90 W
25 W
90 W
1
1
D²PAK
DPAK
1. Limited by package
■
■
■
■
■
■
100% avalanche tested
Extremely high dv/dt capability
Gate charge minimized
Very low intrinsic capacitances
Improved diode reverse recovery
characteristics
Zener-protected
Figure 1.
TO-220
1
3
2
3
1
2
TO-220FP
Internal schematic diagram
D(2)
Application
■
Switching applications
G(1)
Description
SuperMESH3™ is a new Power MOSFET
technology that is obtained via improvements
applied to STMicroelectronics’ SuperMESH™
technology combined with a new optimized
vertical structure. The resulting product has an
extremely low on resistance, superior dynamic
performance and high avalanche capability,
making it especially suitable for the most
demanding applications.
Table 1.
Device summary
Marking
7N52K3
7N52K3
7N52K3
7N52K3
Doc ID 14896 Rev 2
Package
D²PAK
DPAK
TO-220FP
TO-220
Packaging
Tape and reel
Tape and reel
Tube
Tube
1/18
18
S(3)
AM01476v1
Order codes
STB7N52K3
STD7N52K3
STF7N52K3
STP7N52K3
September 2009
STMICROELECTRONICS [ STMICROELECTRONICS ]
