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STM32F100C8T6BTR 参数 Datasheet PDF下载

STM32F100C8T6BTR图片预览
型号: STM32F100C8T6BTR
PDF下载: 下载PDF文件 查看货源
内容描述: 低和中等密度值线,先进的基于ARM的32位MCU低和中等密度值线,先进的基于ARM的32位MCU [Low & medium-density value line, advanced ARM-based 32-bit MCU Low & medium-density value line, advanced ARM-based 32-bit MCU]
分类和应用:
文件页数/大小: 84 页 / 1148 K
品牌: STMICROELECTRONICS [ ST ]
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Electrical characteristics  
STM32F100x4, STM32F100x6, STM32F100x8, STM32F100xB  
.
Table 10. Embedded reset and power control block characteristics  
Symbol  
Parameter  
Conditions  
Min  
Typ Max Unit  
PLS[2:0]=000 (rising edge)  
PLS[2:0]=000 (falling edge)  
PLS[2:0]=001 (rising edge)  
PLS[2:0]=001 (falling edge)  
PLS[2:0]=010 (rising edge)  
PLS[2:0]=010 (falling edge)  
PLS[2:0]=011 (rising edge)  
PLS[2:0]=011 (falling edge)  
PLS[2:0]=100 (rising edge)  
PLS[2:0]=100 (falling edge)  
PLS[2:0]=101 (rising edge)  
PLS[2:0]=101 (falling edge)  
PLS[2:0]=110 (rising edge)  
PLS[2:0]=110 (falling edge)  
PLS[2:0]=111 (rising edge)  
PLS[2:0]=111 (falling edge)  
2.1  
2
2.18 2.26  
2.08 2.16  
V
V
2.19 2.28 2.37  
2.09 2.18 2.27  
2.28 2.38 2.48  
2.18 2.28 2.38  
2.38 2.48 2.58  
2.28 2.38 2.48  
2.47 2.58 2.69  
2.37 2.48 2.59  
2.57 2.68 2.79  
2.47 2.58 2.69  
2.66 2.78 2.9  
2.56 2.68 2.8  
V
V
V
V
V
V
Programmable voltage  
detector level selection  
VPVD  
V
V
V
V
V
V
2.76 2.88  
3
V
2.66 2.78 2.9  
100  
V
(2)  
VPVDhyst  
PVD hysteresis  
mV  
V
1.8(1)  
Falling edge  
Rising edge  
1.88 1.96  
Power on/power down  
reset threshold  
VPOR/PDR  
1.84 1.92 2.0  
40  
V
(2)  
VPDRhyst  
PDR hysteresis  
mV  
ms  
(2)  
tRSTTEMPO  
Reset temporization  
1.5  
2.5  
4.5  
1. The product behavior is guaranteed by design down to the minimum VPOR/PDR value.  
2. Guaranteed by design, not tested in production.  
36/84  
Doc ID 16455 Rev 2  
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