STM32F100x4, STM32F100x6, STM32F100x8, STM32F100xB
Electrical characteristics
Table 8.
Symbol
General operating conditions (continued)
Parameter
Conditions
Min
Max
Unit
VBAT
Backup operating voltage
1.8
3.6
434
444
308
363
85
V
LQFP100
Power dissipation at TA =
85 °C for suffix 6 or TA =
105 °C for suffix 7(2)
LQFP64
TFBGA64
LQFP48
PD
mW
Maximum power dissipation –40
Low power dissipation(3)
–40
Maximum power dissipation –40
Ambient temperature for 6
suffix version
°C
°C
°C
105
105
125
105
125
TA
TJ
Ambient temperature for 7
suffix version
Low power dissipation(3)
–40
–40
–40
6 suffix version
Junction temperature range
7 suffix version
1. When the ADC is used, refer to Table 41: ADC characteristics.
2. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax (see Table 6.2: Thermal
characteristics on page 79).
3. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see
Table 6.2: Thermal characteristics on page 79).
5.3.2
Operating conditions at power-up / power-down
Subject to general operating conditions for T .
A
Table 9.
Symbol
Operating conditions at power-up / power-down
Parameter
VDD rise time rate
DD fall time rate
Min
Max
Unit
0
tVDD
µs/V
V
20
5.3.3
Embedded reset and power control block characteristics
The parameters given in Table 10 are derived from tests performed under the ambient
temperature and V supply voltage conditions summarized in Table 8.
DD
Doc ID 16455 Rev 2
35/84
STMICROELECTRONICS [ ST ]
