欢迎访问ic37.com |
会员登录 免费注册
发布采购

STM32F105RBT6 参数 Datasheet PDF下载

STM32F105RBT6图片预览
型号: STM32F105RBT6
PDF下载: 下载PDF文件 查看货源
内容描述: [Mainstream Connectivity line, ARM Cortex-M3 MCU with 128 Kbytes Flash, 72 MHz CPU, CAN, USB 2.0 OTG]
分类和应用: 以太网通信
文件页数/大小: 95 页 / 1009 K
品牌: STMICROELECTRONICS [ ST ]
 浏览型号STM32F105RBT6的Datasheet PDF文件第49页浏览型号STM32F105RBT6的Datasheet PDF文件第50页浏览型号STM32F105RBT6的Datasheet PDF文件第51页浏览型号STM32F105RBT6的Datasheet PDF文件第52页浏览型号STM32F105RBT6的Datasheet PDF文件第54页浏览型号STM32F105RBT6的Datasheet PDF文件第55页浏览型号STM32F105RBT6的Datasheet PDF文件第56页浏览型号STM32F105RBT6的Datasheet PDF文件第57页  
STM32F105xx, STM32F107xx  
Electrical characteristics  
5.3.12  
I/O port characteristics  
General input/output characteristics  
Unless otherwise specified, the parameters given in Table 35 are derived from tests  
performed under the conditions summarized in Table 9. All I/Os are CMOS and TTL  
compliant.  
Table 35. I/O static characteristics  
Symbol  
Parameter  
Input low level voltage  
Conditions  
Min  
Typ  
Max  
Unit  
VIL  
TTL ports  
–0.5  
0.8  
V
Standard IO input high level voltage  
IO FT(1) input high level voltage  
Input low level voltage  
2
2
VDD+0.5  
5.5V  
VIH  
VIL  
VIH  
CMOS ports  
–0.5  
0.35 VDD  
VDD+0.5  
V
Input high level voltage  
0.65 VDD  
Standard IO Schmitt trigger voltage  
hysteresis(2)  
200  
mV  
mV  
Vhys  
IO FT Schmitt trigger voltage hysteresis(2)  
5% VDD  
(3)  
VSS ~ VIN ~ VDD  
Standard I/Os  
1  
3
Ilkg  
Input leakage current (4)  
µA  
VIN= 5 V, I/O FT  
All pins except for  
PA10  
30  
8
40  
11  
40  
50  
15  
50  
15  
Weak pull-up equivalent  
resistor(5)  
RPU  
VIN ?"VSS  
kY  
PA10  
All pins except for  
PA10  
30  
8
Weak pull-down  
equivalent resistor(5)  
PA10  
RPD  
VIN ?"VDD  
kY  
11  
5
CIO  
I/O pin capacitance  
pF  
1. FT = Five-volt tolerant.  
2. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization, not tested in production.  
3. With a minimum of 100 mV.  
4. Leakage could be higher than max. if negative current is injected on adjacent pins.  
5. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This  
MOS/NMOS contribution to the series resistance is minimum (~10% order).  
All I/Os are CMOS and TTL compliant (no software configuration required), their  
characteristics consider the most strict CMOS-technology or TTL parameters:  
G
For V :  
IH  
if V is in the [2.00 V - 3.08 V] range: CMOS characteristics but TTL included  
DD  
if V is in the [3.08 V - 3.60 V] range: TTL characteristics but CMOS included  
DD  
G
For V :  
IL  
if V is in the [2.00 V - 2.28 V] range: TTL characteristics but CMOS included  
DD  
if V is in the [2.28 V - 3.60 V] range: CMOS characteristics but TTL included  
DD  
Doc ID 15274 Rev 4  
53/95  
 复制成功!