Electrical characteristics
STM32F103xx
(1)
Table 12. Maximum current consumption in Stop and Standby modes
Typ(2)
Max(3)
TA =
Symbol
Parameter
Conditions
Unit
VDD/VBAT VDD/VBAT TA =
= 2.4 V
= 3.3 V
85 °C 105 °C
Regulator in Run mode,
Low-speed and high-speed internal
RC oscillators and high-speed
oscillator OFF (no independent
watchdog)
TBD
24
TBD
TBD
Supply current
in Stop mode
Regulator in Low Power mode,
Low-speed and high-speed internal
RC oscillators and high-speed
oscillator OFF (no independent
watchdog)
IDD
TBD(4)
14(4)
TBD(4) TBD(4)
µA
Supply current Low-speed internal RC oscillator and
in Standby
independent watchdog OFF, low-
speed oscillator and RTC OFF
TBD(4)
2(4)
TBD(4) TBD(4)
TBD(4) TBD(4)
mode(5)
Backup domain
supply current
IDD_VBAT
Low-speed oscillator and RTC ON
1(4)
1.4(4)
1. TBD stands for to be determined.
2. Typical values are measured at TA = 25 °C, VDD = 3.3 V, unless otherwise specified.
3. Data based on characterization results, tested in production at VDD max, fHCLK max. and TA max (for other temperature.
4. Values expected for next silicon revision.
5. To have the Standby consumption with RTC ON, add IDD_VBAT (Low-speed oscillator and RTC ON) to IDD Standby (when
VDD is present the Backup Domain is powered by VDD supply).
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STMICROELECTRONICS [ ST ]
