Electrical characteristics
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 5.
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
On/off states
Parameter
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
GS
= 0)
Gate-body leakage
current (V
DS
= 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
I
D
= 1 mA, V
GS
= 0
V
DS
= max rating
V
DS
= max rating, @125 °C
V
GS
= ± 25 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 10.5 A
2
3
Min.
500
1
100
100
4
Typ.
Max. Unit
V
µA
µA
nA
V
Ω
0.135 0.158
Table 6.
Symbol
C
iss
C
oss
C
rss
C
oss(eq)(1)
Q
g
Q
gs
Q
gd
R
g
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance time related
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
Test conditions
Min.
Typ.
1735
122
4.3
418
50
9.5
25
2.7
Max. Unit
pF
pF
pF
pF
nC
nC
nC
Ω
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0
-
-
V
GS
= 0, V
DS
= 0 to 50 V
V
DD
= 400 V, I
D
= 21 A,
V
GS
= 10 V,
(see
f=1 MHz Gate DC Bias=0
Test signal level=20 mV
open drain
-
-
-
-
-
-
1. C
oss eq
. is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
.
4/21
Doc ID 17432 Rev 2
STMICROELECTRONICS [ STMICROELECTRONICS ]
