STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
V
DS
V
GS
I
D
I
D
I
DM (2)
P
TOT
V
ISO
dv/dt
(3)
T
stg
T
j
Absolute maximum ratings
Value
Parameter
TO-220
Drain-source voltage (V
GS
= 0)
Gate- source voltage
Drain current (continuous) at
T
C
= 25 °C
Drain current (continuous) at
T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Insulation withstand voltage (RMS)
from all three leads to external heat
sink (t=1 s;T
C
=25 °C)
Peak diode recovery voltage slope
Storage temperature
Max. operating junction temperature
15
- 55 to 150
150
21
13
84
150
D²PAK
TO-247
500
± 25
21
(1)
13
(1)
84
(1)
35
2500
TO-220FP
V
V
A
A
A
W
V
V/ns
°C
°C
Unit
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
SD
≤
21 A, di/dt
≤
400 A/µs, V
DS
peak
≤
V
(BR)DSS
, V
DD
= 80% V
(BR)DSS
Table 3.
Symbol
R
thj-case
R
thj-amb
R
thj-pcb(1)
T
l
Thermal data
Value
Parameter
TO-220
Thermal resistance junction-case max
Thermal resistance junction-ambient
max
Thermal resistance junction-pcb max
Maximum lead temperature for
soldering purpose
300
62.5
30
300
D²PAK
0.83
50
TO-247 TO-220FP
3.6
62.5
°C/W
°C/W
°C/W
°C
Unit
1. When mounted on 1inch² FR-4 board, 2 oz Cu
Table 4.
Symbol
I
AR
E
AS
Avalanche characteristics
Parameter
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting Tj = 25 °C, I
D
= I
AR
, V
DD
= 50 V)
Doc ID 17432 Rev 2
Value
7.5
300
Unit
A
mJ
3/21
STMICROELECTRONICS [ STMICROELECTRONICS ]
