STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5
Electrical characteristics
Table 6.
Symbol
t
d(off)
t
r
t
c
t
f
Switching times
Parameter
Turn-off delay time
Rise time
Cross time
Fall time
Test conditions
V
DD
= 400 V, I
D
= 9 A,
R
G
= 4.7
Ω,
V
GS
= 10 V
(see
Min.
Typ.
29
9.5
23
13
Max
Unit
ns
ns
ns
ns
-
-
Table 7.
Symbol
I
SD
I
SDM
(1)
Source drain diode
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 13 A, V
GS
= 0
I
SD
= 13 A, di/dt = 100 A/µs
V
DD
= 100 V (see
I
SD
= 13 A, di/dt = 100 A/µs
V
DD
= 100 V, T
j
= 150 °C
(see
Test conditions
Min.
-
-
-
238
2.8
23.5
278
3.3
24
Typ.
Max. Unit
13
52
1.5
A
A
V
ns
µC
A
ns
µC
A
V
SD (2)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
-
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Doc ID 17078 Rev 2
5/22