Electrical characteristics
STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5
2
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 4.
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
On /off states
Parameter
Drain-source
breakdown voltage
Test conditions
I
D
= 1 mA, V
GS
= 0
Min.
550
1
100
100
3
4
0.18
5
0.24
Typ.
Max.
Unit
V
µA
µA
nA
V
Ω
V
DS
= Max rating
Zero gate voltage
drain current (V
GS
= 0) V
DS
= Max rating, T
C
=125 °C
Gate-body leakage
current (V
DS
= 0)
V
GS
= ± 25 V
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA
Static drain-source on
resistance
V
GS
= 10 V, I
D
= 6.5 A
Table 5.
Symbol
C
iss
C
oss
C
rss
C
o(tr)(1)
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent
capacitance time
related
Equivalent
capacitance energy
related
Intrinsic gate
resistance
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
= 0 to 440 V
-
35
-
pF
Test conditions
Min.
Typ.
1352
38
3.7
Max.
Unit
pF
pF
pF
V
DS
= 100 V, f = 1 MHz,
V
GS
= 0
-
-
-
98
-
pF
C
o(er)(2)
R
G
Q
g
Q
gs
Q
gd
f = 1 MHz open drain
V
DD
= 440 V, I
D
= 6.5 A,
V
GS
= 10 V
(see
-
1.7
31
6.3
14
-
Ω
nC
nC
nC
-
-
1. C
oss eq.
time related is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
2. C
oss eq.
energy related is defined as a constant equivalent capacitance giving the same stored energy as
C
oss
when V
DS
increases from 0 to 80% V
DSS
4/22
Doc ID 17078 Rev 2
STMICROELECTRONICS [ STMICROELECTRONICS ]
