STD17N05L/STD17N06L
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING RESISTIVE LOAD
Symbol
t
d(on)
t
r
(di/dt)
on
Parameter
Turn-on Time
Rise Time
Turn-on Current Slope
Test Conditions
V
DD
= 30 V I
D
= 8.5 A
R
GS
= 50
Ω
V
GS
= 5 V
(see test circuit, figure 3)
V
DD
= 40 V I
D
= 17 A
R
GS
= 50
Ω
V
GS
= 5 V
(see test circuit, figure 5)
V
DD
= 40 V
I
D
= 17 A
V
GS
= 5 V
Min.
Typ.
60
350
130
Max.
90
500
Unit
ns
ns
A/µs
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
18
6
9
26
nC
nC
nC
SWITCHING INDUCTIVE LOAD
Symbol
t
r(Vof f)
t
f
t
c
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V
DD
= 40 V I
D
= 17 A
R
GS
= 50
Ω
V
GS
= 5 V
(see test circuit, figure 5)
Min.
Typ.
70
100
180
Max.
100
150
260
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
I
S D
I
SDM
(•)
V
S D
(∗)
t
rr
Q
rr
I
RRM
Parameter
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 17 A
V
G S
= 0
65
0.13
4
I
SD
= 17 A di/dt = 100 A/µs
V
DD
= 30 V
T
j
= 150
o
C
(see test circuit, figure 5)
Test Conditions
Min.
Typ.
Max.
17
68
1.5
Unit
A
A
V
ns
µC
A
(∗) Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/10
STMICROELECTRONICS [ STMICROELECTRONICS ]
