STD17N05L
STD17N06L
N - CHANNEL ENHANCEMENT MODE
LOW THRESHOLD POWER MOS TRANSISTOR
TYPE
STD17N05L
STD17N06L
s
s
s
s
s
s
s
s
V
DSS
50 V
60 V
R
DS( on)
< 0.085
Ω
< 0.085
Ω
I
D
17 A
17 A
s
s
TYPICAL R
DS(on)
= 0.065
Ω
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
o
C
LOW GATE CHARGE
LOGIC LEVEL COMPATIBLE INPUT
175
o
C OPERATING TEMPERATURE
APPLICATION ORIENTED
CHARACTERIZATION
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
3
1
IPAK
TO-251
(Suffix ”-1”)
2
1
DPAK
TO-252
3
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
REGULATORS
s
DC-DC & DC-AC CONVERTERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
STD17N05L
V
D S
V
DG R
V
GS
I
D
I
D
I
D M
(•)
P
tot
T
stg
T
j
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Storage Temperature
Max. Operating Junction Temperature
50
50
±
15
17
12
68
55
0.37
-65 to 175
175
Value
STD17N06L
60
60
V
V
V
A
A
A
W
W/
o
C
o
o
Unit
C
C
(•) Pulse width limited by safe operating area
January 1995
1/10
STMICROELECTRONICS [ STMICROELECTRONICS ]
