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ST10F276S-4T3 参数 Datasheet PDF下载

ST10F276S-4T3图片预览
型号: ST10F276S-4T3
PDF下载: 下载PDF文件 查看货源
内容描述: 16位MCU与MAC单元832 KB的闪存和68 KB的RAM [16-bit MCU with MAC unit 832 Kbyte Flash memory and 68 Kbyte RAM]
分类和应用: 闪存
文件页数/大小: 235 页 / 2491 K
品牌: STMICROELECTRONICS [ ST ]
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Internal Flash memory  
ST10F276E  
Table 13. Flash data register 1 low  
Bit  
Function  
Data Input 15:0  
DIN(15:0)  
These bits must be written with the Data to program the Flash with the following  
operations: Word Program (32-bit), Double Word Program (64-bit) and Set Protection.  
4.3.8  
Flash data register 1 high  
FDR1H (0x0E 000E)  
FCR  
8
Reset value: FFFFh  
15  
14  
13  
12  
11  
10  
9
7
6
5
4
3
2
1
0
DIN31 DIN30 DIN29 DIN28 DIN27 DIN26 DIN25 DIN24 DIN23 DIN22 DIN21 DIN20 DIN19 DIN18 DIN17 DIN16  
RW RW RW RW RW RW RW RW RW RW RW RW RW RW RW RW  
Table 14. Flash data register 1 high  
Bit  
Function  
Data input 31:16  
DIN(31:16)  
These bits must be written with the data to program the Flash with the following  
operations: word program (32-bit), double word program (64-bit) and set protection.  
4.3.9  
Flash address register low  
FARL (0x0E 0010)  
FCR  
8
Reset value: 0000h  
15  
14  
13  
12  
11  
10  
9
7
6
5
4
3
2
1
0
ADD15 ADD14 ADD13 ADD12 ADD11 ADD10 ADD9 ADD8 ADD7 ADD6 ADD5 ADD4 ADD3 ADD2  
Reserved  
RW RW RW RW RW RW RW RW RW RW RW RW RW RW  
Table 15. Flash address register low  
Bit  
Function  
Address 15:2  
These bits must be written with the address of the Flash location to program in the  
following operations: word program (32-bit) and double word program (64-bit). In  
double word program bit ADD2 must be written to ‘0’.  
ADD(15:2)  
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Doc ID 12303 Rev 3  
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