STP7NK80Z - STP7NK80ZFP - STB7NK80Z - STB7NK80Z-1
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Value
TO-220 / D²PAK
Parameter
Unit
TO-220FP
I²PAK
VDS
VGS
ID
Drain-source voltage (VGS = 0)
Gate- source voltage
800
30
V
V
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
5.2
3.3
20.8
125
1
5.2 (1)
3.3 (1)
20.8(1)
30
A
A
ID
(2)
IDM
A
PTOT
Total dissipation at TC = 25°C
Derating factor
W
0.24
W/°C
V
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ)
dv/dt (3) Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all
4000
4.5
V/ns
three leads to external heat sink
VISO
--
2500
V
(t=1s; Tc= 25°C)
Tj
Max operating junction temperature
Storage temperature
°C
°C
-55 to 150
Tstg
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤5.2 A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX.
Table 2.
Symbol
Thermal data
Value
TO-220/D2PAK
I2PAK
Parameter
Unit
TO-220FP
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
1
4.2
°C/W
°C/W
62.5
300
Maximum lead temperature for soldering
Tl
°C
purpose
3/18
STMICROELECTRONICS [ ST ]
