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P10NK60ZFP 参数 Datasheet PDF下载

P10NK60ZFP图片预览
型号: P10NK60ZFP
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道600V - 0.65OHM - 10A - I2 / D2PAK - TO- 220 / FP - TO- 247齐纳保护超网TM功率MOSFET [N-channel 600V - 0.65OHM - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH TM Power MOSFET]
分类和应用:
文件页数/大小: 19 页 / 409 K
品牌: STMICROELECTRONICS [ ST ]
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STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z  
2 Electrical characteristics  
Table 8.  
Symbol  
Source drain diode  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
I
Source-drain Current  
10  
36  
A
A
SD  
I
Note 2 Source-drain Current (pulsed)  
SDM  
V
Note 4  
I
I
=10A, V =0  
Forward on Voltage  
1.6  
V
SD  
SD  
GS  
t
rr  
Reverse Recovery Time  
Reverse Recovery Charge  
Reverse Recovery Current  
570  
4.3  
15  
ns  
µC  
A
=8A, di/dt = 100A/µs,  
SD  
Q
rr  
V
=40 V, Tj=150°C  
DD  
I
RRM  
(1) ISD 10A, di/dt 200A/µs, VDD V(BR)DSS, Tj TJMAX  
(2) Pulse width limited by safe operating area  
(3) Limited only by maximum temperature allowed  
(4) Pulsed: pulse duration = 300µs, duty cycle 1.5%  
(5) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0  
to 80%  
5/19  
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