2 Electrical characteristics
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
2
Electrical characteristics
(T
= 25 °C unless otherwise specified)
CASE
Table 5.
On/Off
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Drain-Source Breakdown
Voltage
V
I
= 250µA, V = 0
600
V
(BR)DSS
D
GS
Zero Gate Voltage Drain
1
I
V
V
= Max Rating,
DS
µA
µA
DSS
Current (V = 0)
50
GS
Gate Body Leakage Current
I
= ±15V, V = 0
±10
GSS
GS
DS
(V = 0)
DS
V
V
V
= V , I = 250 µA
Gate Threshold Voltage
3
3.75
0.65
4.5
V
GS(th)
DS
GS
D
Static Drain-Source On
Resistance
R
= 10 V, I = 20 A
0.75
Ω
DS(on)
GS
D
Table 6.
Symbol
Dynamic
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
Note 4
V
=15V, I = 4.5A
Forward Transconductance
7.8
S
fs
DS
DS
D
C
C
iss
Input Capacitance
1370
156
37
pF
pF
pF
V
=25V, f=1 MHz, V =0
Output Capacitance
oss
GS
Reverse Transfer Capacitance
C
rss
C
oss eq.
V
=0, V =0V to 480V
Equivalent Ouput Capacitance
90
pF
GS
DS
Note 5
Q
V
V
=480V, I = 8A
g
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
50
10
25
70
nC
nC
nC
DD
GS
D
Q
=10V
gs
Q
(see Figure 19)
gd
Table 7.
Symbol
Switching on/off
Parameter
Test Conditions
=300 V, I =4A,
Min.
Typ.
Max.
Unit
V
DD
D
t
Turn-on Delay Time
Rise Time
20
20
ns
ns
d(on)
R =4.7Ω, V =10V
G
GS
t
r
(see Figure 20)
=300 V, I =4A,
V
DD
D
t
Turn-off Delay Time
Fall Time
55
30
ns
ns
d(off)
R =4.7Ω, V =10V
G
GS
t
f
(see Figure 20)
=480 V, I =8A,
t
V
r(Voff)
Off-voltage Rise Time
Fall Time
18
18
36
ns
ns
ns
DD
D
t
R =4.7Ω, V =10V
f
G
GS
Cross-over Time
t
(see Figure 20)
c
4/19
STMICROELECTRONICS [ ST ]
