STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
1 Absolute maximum ratings
Table 3.
Symbol
Avalanche characteristics
Parameter
Max Value
Unit
Avalanche Current, repetitive or
Not-Repetitive (pulse width limited by Tj max)
I
9
A
AR
Single Pulse Avalanche Energy
E
300
3.5
mJ
mJ
AS
AR
(starting Tj=25°C, I =I , V = 50V)
D
AR
DD
Repetitive Avalanche Energy
(pulse width limited by Tj max)
E
Table 4.
Symbol
Gate-source zener diode
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Igs=±1mA
Gate-Source
Breakdown Voltage
BV
30
V
GSO
(Open Drain)
1.1
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER
DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the
device’s ESD capability, but also to make them safely absorb possible voltage transients that
may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
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STMICROELECTRONICS [ ST ]
